CCD芯片金属层脱落失效分析与改进措施  

Analysis of Metal Layer Liftoff Failure in CCD Chip and Improvement Measures

作　　者：刘方[1] 孙晨 张故万[1] LIU Fang;SUN Chen;ZHANG Guwan(Solid State Image Sensor Division of Chongqing Institute of Optoelectronic Technology,Chongqing 400060,China)

机构地区：[1]重庆光电技术研究所固体图像传感器事业部,重庆400060

出　　处：《集成电路应用》2021年第8期20-22,共3页Application of IC

摘　　要：在CCD芯片制作中,出现金属层脱落的现象,通过分析金属层脱落的原因,开展工艺验证实验,采取相应改进措施,成功解决了金属层脱落的问题,使得金属层制备的工艺集成能力和芯片成品率得到了显著提升。Metal liftoff is an unexpected phenomenon potentially existing in fabrication of CCD chip.In this work,the origin and process of metal layer liftoff have been analyzed which led to running process verification experiment,adopting improvement measures.Duo to breakthroughs in related technical measures,the process integration of metal fabrication and the rate of finished chip have been remarkably promoted.

关 键 词：集成电路制造 失效分析 金属层脱落 CCD 

分 类 号：TN405[电子电信—微电子学与固体电子学] TN386.5