原子层沉积的超薄InN强化量子点太阳能电池的界面输运  

Enhancement of interface transportation for quantum dot solar cells using ultrathin InN by atomic layer deposition

作　　者：李晔 王茜茜 卫会云 仇鹏 何荧峰 宋祎萌 段彰 申诚涛 彭铭曾 郑新和 Li Ye;Wang Xi-Xi;Wei Hui-Yun;Qiu Peng;He Ying-Feng;Song Yi-Meng;Duan Zhang;Shen Cheng-Tao;Peng Ming-Zeng;Zheng Xin-He(Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science,School of Mathematics and Physics,University of Science and Technology Beijing,Beijing 100083,China)

机构地区：[1]北京科技大学数理学院,磁光电复合材料与界面科学北京市重点实验室,北京100083

出　　处：《物理学报》2021年第18期321-328,共8页Acta Physica Sinica

基　　金：国家重点研发计划(批准号:2018YFA0703700);国家自然科学基金青年基金(批准号:52002021);中央高校基本科研业务费(批准号:FRF-TP-20-016A2)资助的课题.

摘　　要：量子点敏化太阳能电池具有重要的潜在应用,但仍存在界面输运、稳定性和效率改善的挑战.本文采用等离子增强原子层沉积技术在低温下(170-230℃)制备了InN,并将其插入至CdSeTe基量子点太阳能电池光阳极的FTO/TiO2界面处,进行了原子层沉积窗口和电池性能改善的物理机理研究.结果表明,引入InN超薄层后的电池效率整体有明显提升,并且促进了电子的输运,填充因子明显增加.同时,加速了电子抽取、转移和分离,降低了电荷复合的可能性.对插入的InN沉积温度和厚度对电池性能的影响进行了深入分析,并对背后的物理机理进行了讨论.Quantum dot-sensitized solar cells have gained rapid development which could produce potential applications.Although they have a theoretical photoelectric conversion efficiency of 44%,there is still a considerable gap in comparison with corresponding practical solar cells,which is mainly due to the fact that the interface transfer,stability and efficiency improvement are still facing some problems.In particular,the carrier recombination loss at the cell interface seriously hinders the quantum dot-sensitized solar cells from developing.In this work,an ultra-thin layer of InN prepared by plasma-enhanced atomic layer deposition is inserted into the FTO/TiO2 interface of the photoanode of CdSeTe based quantum dot-sensitized solar cells to improve the performance of the photoanode structure,and physical mechanism behind the device is discussed.We first investigate the effects of different deposition temperatures(170,200 and 230℃)on the cell performance of InN films.While the InN ultra-thin layer is deposited at 200℃,an enhancement of 16.9%in conversion efficiency is achieved as compared with the reference group.Then,the effects of different thickness(5,10,and 15 cycles)on the cell are investigated at a fixed deposition temperature of 200℃.Additionally,an improvement of fill factor for the device after an introduction of InN layer is observed.This enhancement is further convinced by an apparent reduction of series resistance extracted by the Nyquist curve.The significant increase in fill factor indicates that the introduction of InN accelerates the extraction,transfer and separation of electrons,and reduces the possibility of photon-generated carriers recombination.However,the insertion of InN deposition temperature and thickness have a certain range of enhancement in the cell performance,and further investigation of the mechanism will be carried out.

关 键 词：INN 原子层沉积 填充因子 界面输运 

分 类 号：TB383.1[一般工业技术—材料科学与工程] TM914.4[电气工程—电力电子与电力传动]