高浓度硅外延纵向电阻率分布研究  

Study on Vertical Resistivity Distribution of Silicon Epitaxy with High Doping Concentration

作　　者：尤晓杰 王银海 葛华 韩旭 YOU Xiaojie;WANG Yinhai;GE Hua;HAN Xu(Nanjing Guosheng Electronics Co.,Ltd.,Nanjing 211100,China)

机构地区：[1]南京国盛电子有限公司,南京211100

出　　处：《电子与封装》2021年第9期73-76,共4页Electronics & Packaging

摘　　要：研究了桶式N型外延中发现的波浪形貌纵向电阻率分布现象,分析和验证了可能的影响因素(温度、生长速率、转速、挂件、掺杂浓度),得到如下结论,波浪形貌的纵向电阻率分布是在高掺杂浓度时因桶式基座面气流干扰产生的现象,且该现象通过基座面尺寸的调整可以消除。By studying the phenomenon of wavy resistivity distribution which is found in n-type epitaxy produced with barrel furnace,and analysing the related factors(temperature,growth rate,rotating speed,pendant,doping concentration),such conclusions are found,wavy resistivity distribution is an phenomenon caused by disturbance of barrel substrate at the condition of high doping concentration.Also,the phenomenon can be eliminated by adjusting the size of the substrate.

关 键 词：桶式外延炉 基座 波浪形貌 纵向电阻率分布 掺杂浓度 

分 类 号：TN305.3[电子电信—物理电子学] O782.7[理学—晶体学]