5V双向TVS器件表面缺陷改善  

Surface Defect Improvement of 5V Bidirectional TVS Device

作　　者：陈正才 CHEN Zhengcai(Wuxi Huapu Microchips Co.,Ltd.,Wuxi 214035,China)

机构地区：[1]无锡华普微电子有限公司,江苏无锡214035

出　　处：《电子与封装》2021年第9期81-84,共4页Electronics & Packaging

摘　　要：通过对5V双向TVS产品结构和工艺的研究,分析了高温退火工艺条件下衬底外延离子扩散对晶圆边缘处器件漏电和良率的影响。通过优化退火工艺,改善了器件表面缺陷,解决了晶圆边缘处器件漏电过高的问题,将片内良率从93%提升至99%以上。The structure and process of 5V bidirectional TVS device is researched,and the effect of high temperature annealing process on device leakage and on-chip yield is analyzed.By optimizing the annealing process,the problem of device failure at the edge of the wafer caused by the diffusion of impurities is solved,and the on-chip yield is increased from 93%to more than 99%.

关 键 词：杂质扩散 漏电 退火 

分 类 号：TN305[电子电信—物理电子学]