Gas Sensitivity of In0.3Ga0.7As Surface QDs Coupled to Multilayer Buried QDs  

作　　者：Guodong WANG Zengguang LIU Junjun WANG Yingli YANG Xiaolian LIU Xinran ZHANG Liwei ZHANG Guohua CAO 

机构地区：[1]School of Physics and Electronic Information Engineering,Henan Polytechnic University,Jiaozuo 454000,China [2]College of Computer Science and Technology,Henan Polytechnic University,Jiaozuo 454000,China

出　　处：《Photonic Sensors》2020年第3期283-290,共8页光子传感器（英文版）

基　　金：The authors gratefully acknowledge the supports from the National Natural Science Foundation of China(Grant Nos.U1804165 and 61774053);the Project of Henan Provincial Department of Science and Technology(Grant No.182102410047);the Program of Henan Polytechnic University(Grant Nos.NSFRF140116 and B2014-020);the Program of Henan Province Office of Education(Grant No.19B510004).

摘　　要：A detailed analysis of the electrical response of In0.3Ga0.7As surface quantum dots(SQDs)coupled to 5-layer buried quantum dots(BQDs)is carried out as a function of ethanol and acetone concentration while temperature-dependent photoluminescence(PL)spectra are also analyzed.The coupling structure is grown by solid source molecular beam epitaxy.Carrier transport from BQDs to SQDs is confirmed by the temperature-dependent PL spectra.The importance of the surface states for the sensing application is once more highlighted.The results show that not only the exposure to the target gas but also the illumination affect the electrical response of the coupling sample strongly.In the ethanol atmosphere and under the illumination,the sheet resistance of the coupling structure decays by 50%while it remains nearly constant for the reference structure with only the 5-layer BQDs but not the SQDs.The strong dependence of the electrical response on the gas concentration makes SQDs very suitable for the development of integrated micrometer-sized gas sensor devices.

关 键 词：Surface quantum dots INGAAS gas sensitivity 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]