24~30 GHz GaN HEMT单片集成单刀双掷开关  

A 24-30 GHz GaN HEMT SPDT switch MMIC

作　　者：曾丁元 朱浩慎 冯文杰 车文荃[1,2] 薛泉 ZENG DingyuanZHU Haoshen;FENG Wenjie;CHE Wenquan;XUE Quan(School of Electronic and Information Engineering/Guangdong Provincial Key Laboratory of Millimeter-Wave and Terahertz,South China University of Technology,Guangzhou 510641;Intelligent Sensing and Wireless Transmission Center,Pazhou Laboratory,Guangzhou 510330;School of Electronic and Optical Engineering,Nanjing University of Science&Technology,Nanjing 210094)

机构地区：[1]华南理工大学电子与信息学院/广东省毫米波与太赫兹重点实验室,广州510641 [2]琶洲实验室智能感知与无线传输中心,广州510330 [3]南京理工大学电子工程与光电技术学院,南京210094

出　　处：《南京信息工程大学学报（自然科学版）》2021年第4期444-449,共6页Journal of Nanjing University of Information Science & Technology（Natural Science Edition）

基　　金：国家重点研发计划(2018YFB1802002);广东省“珠江人才计划”引进创新创业团队项目(2017ZT07X032)。

摘　　要：本文研究了一种基于100 nm氮化镓(GaN)高电子迁移率晶体管(HEMT)工艺设计的24~30 GHz单片集成单刀双掷(SPDT)开关.该开关采用1/4波长微带线并联HEMT开关器件的结构,通过采用两级并联HEMT实现低插入损耗同时获得更好的隔离度.测试结果显示,在24~30 GHz的5G毫米波频段内以及0/-5 V的控制电压下,该开关的插入损耗低于1.5 dB,隔离度优于28 dB,输入功率1 dB压缩点大于27 dBm.测试结果能够很好地验证仿真结果.A 24-30 GHz monolithic integrated Single-Pole Double-Throw(SPDT)switch based on 100 nm Gallium Nitride(GaN)High Electron Mobility Transistor(HEMT)process is presented in this paper.This switch adopts a quarter-wavelength microstrip line with parallel HEMT devices topology.By using two-stage parallel HEMT design,the SPDT achieves greater isolation while maintaining good Insertion Loss(IL).With a control voltage of 0/-5 V,the measured IL of this SPDT is less than 1.5 dB,the isolation is greater than 28 dB,and the input power 1 dB compression point is greater than 27 dBm within 24-30 GHz 5G millimeter-wave frequency bands.The measurement results well verify the simulations.

关 键 词：GaN HEMT 单片微波集成电路 单刀双掷开关 

分 类 号：TN43[电子电信—微电子学与固体电子学]