HR-ICP-MS测定电子级氨中的痕量杂质  

Determination of traceimpurities in electronic-grade ultra-pure ammonia by HR-ICP-MS

作　　者：陈永康[1] 徐建[1] 郝萍[1] 张笑旻[1] 李春华[1] CHEN Yong-kang;XU Jian;HAO Ping;ZHANG Xiao-min;LI Chun-hua(Shanghai Institute of Measurement and Testing Technology,Shanghai 201203,China)

机构地区：[1]上海市计量测试技术研究院,上海201203

出　　处：《化学工程师》2021年第8期17-21,共5页Chemical Engineer

基　　金：上海市科学技术委员会科技项目(19142201800)。

摘　　要：电子级超纯氨是半导体产业上游关键配套原材料,其痕量杂质含量直接影响材料的光学及电学性能乃至器件的使用寿命,是半导体产业链发展中一个重要环节。本文采用高分辨电感耦合等离子质谱仪(HR-ICP-MS)标准加入法检测电子级氨水中痕量杂质元素,回收率在92.1%~119.6%之间,重复性在0.2%~3.9%,检测限能满足电子级氨中杂质含量在(0.1~1.0)μg·kg^(-1)的测试需求。Electronic-grade ultra-pure ammonia is the key raw material for semiconductor industry,and its trace impurity content directly affects the optical and electrical properties of materials and even the service life of devices.It is an important link in the development of semiconductor industry chain.In this paper,high resolution inductively coupled plasma mass spectrometry(HR-ICP-MS)was used to detect impurities in electronic-grade ultra-pure ammonia,the recovery was between 92.1%and 119.6%,the repeatability ranged from 0.2%to 3.9%,and the detection limit meet the requirement of(0.1~1.0)μg·kg^(-1) level of impurities in electronic ammonia.

关 键 词：超纯氨 HR-ICP-MS 标准加入法 痕量杂质 

分 类 号：O657.6[理学—分析化学]