一种2.2~4 GHz高增益低噪声放大器  

A 2.2~4 GHz Low Noise Amplifier with High Gain

作　　者：雷华奎 李志强 王显泰[2,4] 段连成[1,2,3] LEI Huakui;LI Zhiqiang;WANG Xiantai;DUAN Liancheng(Univ.of Chinese Academy of Sci.,Beijing 100049,P.R.China;Institute of Microelec.,Chinese Academy of Sci.,Beijing 100029,P.R.China;Beijing Key Laboratory for Next Generaton RF Communication Chip Technology,Beijing 100029,P.R.China;OnMicro Microelectronics Co.,Ltd.,Beijing 100084,P.R.China)

机构地区：[1]中国科学院大学,北京100049 [2]中国科学院微电子研究所,北京100029 [3]新一代通信射频芯片技术北京重点实验室,北京100029 [4]昂瑞微电子技术有限公司,北京100084

出　　处：《微电子学》2021年第4期471-476,共6页Microelectronics

基　　金：国家科技重大专项(2018ZX09201011);中科院院地合作项目(18YFYSZC00200)。

摘　　要：采用0.25μm GaAs赝配高电子迁移率晶体管(pHEMT)工艺,设计并实现了一种应用于5G通信2.2~4 GHz频段的高增益共源共栅低噪声放大器(LNA)。通过将并联RC负反馈与共栅接地电容结合,不使用源极电感,实现了宽带高增益的LNA设计。测试结果表明,2.2~4 GHz频段增益大于24 dB,输出3阶互调(OIP3)为28 dBm,噪声系数(NF)小于0.78 dB,功耗为190 mW,芯片面积为(810×710)μm^(2)。综合指标(FOM)为14.4 dB,与同类LNA相比具有一定的优势。A high gain cascode low noise amplifier(LNA)for 5 G communication band of 2.2~4 GHz was designed and implemented in a 0.25μm GaAs pHEMT process.By combining the parallel RC feedback with the common gate grounding capacitor,the LNA with broadband and high gain was completed without the use of source inductance.The measurement results showed that the gain of 2.2~4 GHz band was better than 24 dB,the output third-order intermodulation(OIP3)was 28 dBm,the noise figure(NF)was less than 0.78 dB,the power consumption was 190 mW,and the chip area was(810×710)μm^(2).The Figure of Merit(FOM)was 14.4 dB,which had certain advantages compared with relevant LNAs.

关 键 词：共源共栅 低噪声放大器 输出3阶互调 综合指标 

分 类 号：TN722.3[电子电信—电路与系统]