28 nm超薄体FD-SOI高温特性研究  

Study on High Temperature Characteristics of 28 nm Ultra-Thin-Body FD-SOI

作　　者：张颢译 曾传滨[1,2] 李晓静 高林春[1,2] 罗家俊[1,2] 韩郑生[1,2,3] ZHANG Haoyi;ZENG Chuanbin;LI Xiaojing;GAO Linchun;LUO Jiajun;HAN Zhengsheng(Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,P.R.China;Key Laboratory of Silicon Device and Technology,Chinese Academy of Sciences,Beijing 100029,P.R.China;University of Chinese Academy of Sciences,Beijing 100029,P.R.China)

机构地区：[1]中国科学院微电子研究所,北京100029 [2]中国科学院硅器件技术重点实验室,北京100029 [3]中国科学院大学,北京100049

出　　处：《微电子学》2021年第4期577-581,共5页Microelectronics

基　　金：国家自然基金青年基金项目(61804168)。

摘　　要：研究了低阈值电压(LVT)结构的28 nm超薄体全耗尽绝缘体上硅(FD-SOI)MOSFET的高温下特性。在300℃下对器件进行测试,将FD-SOI与部分耗尽(PD)SOI进行参数对比。结合理论分析,证明了高温下超薄体FD-SOI具有比PD-SOI更低的阈值电压漂移率和亚阈值摆幅。在300℃高温下工作时,SOI MOSFET的参数发生退化,阈值电压减小,泄漏电流增加,栅极对沟道电流的控制能力大大减小。超薄体FD-SOI的设计可使器件的高温性能更加稳定,将电路的工作温度提高到300℃。The high temperature characteristics of 28 nm ultra-thin-body fully depleted(FD) SOI MOSFET with low threshold voltage(LVT)structure were studied. The device was tested at 300 ℃, and parameters were compared between FD-SOI and partially depleted(PD) SOI. Combined with theoretical analysis, it was proved that ultra-thin-body FD-SOI had lower threshold voltage drift rate and sub-threshold slope than PD-SOI at high temperature. When operating at 300 ℃, the parameters of SOI MOSFET degrade, the threshold voltage decreased, the leakage current increased, and the gate’s ability to control the channel current was greatly reduced. The design of the ultra-thin body FD-SOI allowed for more stable high temperature performance of the device, thus the operating temperature of the circuit was increased to 300 ℃.

关 键 词：高温器件 阈值电压 亚阈值摆幅 超薄体FD-SOI 

分 类 号：TN386[电子电信—物理电子学]