空气对HAC太阳电池晶体硅/本征非晶硅界面污染情况分析  

Analysis of air pollution on crystal silicon/intrinsic amorphous silicon interface of HAC solar cells

作　　者：杨烁 陈坤 张衡 王贵林 黄海宾[1] 袁吉仁[4] YANG Shuo;CHEN Kun;ZHANG Heng;WANG Guilin;HUANG Haibin;YUAN Jiren(Photovoltaic Research Institute,Nanchang University,Nangchang 330031,China;Zhejiang Aixu Solar Energy Technology Co.,Ltd.,Yiwu 322009,China;Leshan Vocational and Technical College,Leshan 614000,China;School of Sciences,Nanchang University,Nangchang 330031,China)

机构地区：[1]南昌大学光伏研究院,江西南昌330031 [2]浙江爱旭太阳能科技有限公司,浙江义乌322009 [3]乐山职业技术学院,四川乐山614000 [4]南昌大学理学院,江西南昌330031

出　　处：《南昌大学学报（工科版）》2021年第3期217-220,284,共5页Journal of Nanchang University(Engineering & Technology)

基　　金：国家自然科学基金资助项目(11964018);科技部国家重点研发计划课题(2018YFB1500403)。

摘　　要：采用热丝CVD法在N型体硅上以全程真空环境镀膜与IN镀膜后破真空再镀IP的不同形式,分别生长IN-IP非晶硅膜层,用WCT-120对薄膜钝化性能进行分析,并用wxAMPS软件模拟样品电池效率。比对结果表明全程真空环境镀膜样品的反向饱和电流密度(J_(0))和理论开压(iVOC)分别为5.12×10^(-15) A·cm^(-2)和0.731 V,模拟效率为23.15%;IN-IP破真空镀膜样品的J_(0)和iVOC分别为9.06×10^(-14) A·cm^(-2)和0.654 V,模拟效率为20.24%。因此,热丝CVD全程真空环境相对于IN-IP破真空镀膜具有更优的膜层生长方法。IN-IP amorphous silicon films were grown on N-type bulk silicon by hot filament-chemical vapor deposition(CVD)method in different forms of vacuum coating during the whole process and in coating after vacuum breaking and then IP plating.The passivation performance of the films was analyzed by WCT-120,and the sample cell efficiency was simulated by wxAMPS software.The results showed that the J_(0) and iVOC of the sample obtained by vacuum coating were 5.12×10^(-15) A·cm^(-2) and 0.731 V,respectively,and the simulation efficiency was 23.15%.The J_(0) and iVOC values of the samples obtained by IN-IP vacuum plating were 9.06×10^(-14) A·cm^(-2) and 0.654 V,respectively,and the simulation efficiency was 20.24%;The results showed that the whole vacuum environment of hot filament CVD was a better method for film growth than that of IN-IP vacuum breaking coating.

关 键 词：热丝CVD 晶体硅/非晶硅 全程真空 破真空 镀膜 

分 类 号：O473[理学—半导体物理] O474[理学—物理]