Direct growth of graphene films without catalyst on flexible glass substrates by PECVD  

作　　者：Rui-Xia Miao Chen-He Zhao Shao-Qing Wang Wei Ren Yong-Feng Li Ti-Kang Shu Ben Yang 苗瑞霞;赵晨鹤;王少青;任卫;李永锋;束体康;杨奔(School of Electronic Engineering,Xi'an University of Posts&Telecommunications,Xi'an 710121,China)

机构地区：[1]School of Electronic Engineering,Xi'an University of Posts&Telecommunications,Xi'an 710121,China

出　　处：《Chinese Physics B》2021年第9期565-573,共9页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.51302215);the Joint Research Funds of Department of Science&Technology of Shaanxi Province and Northwestern Polytechnical University,China(Grant No.2020GXLH-Z-029);the Natural Science Basic Research Program of Shaanxi Province,China(Grant Nos.2018JQ6084 and 2019JQ-860).

摘　　要：A hydrogen-plasma-etching-based plasma-enhanced chemical vapor deposition(PECVD)synthesis route without metal catalyst for preparing the graphene films on flexible glass is developed.The quality of the prepared graphene films is evaluated by scanning electron microscopy,x-ray photoelectron spectroscopy,high-resolution transmission electron microscopy,ultraviolet-visible spectroscopy,and electrochemical measurements.In a radio frequency(RF)power range of 50 W-300 W,the graphene growth rate increases with RF power increasing,while the intensity ratio of D-to G-Raman peak(I_(D)/I_(G))decreases.When the RF power is higher than 300 W,the I_(D)/I_(G)rises again.By optimizing experimental parameters of hydrogen plasma etching and RF power,the properties of as-prepared flexible graphene on glass are modulated to be able to achieve the graphene's transparency,good electrical conductivity,and better macroscopic uniformity.Direct growth of graphene film without any metal catalyst on flexible glass can be a promising candidate for applications in flexible transparent optoelectronics.

关 键 词：GRAPHENE flexible glass PECVD RF power 

分 类 号：TQ127.11[化学工程—无机化工] TB383.2[一般工业技术—材料科学与工程]