一种双向超低电容TVS器件的研制  

Development and Fabrication of a Symmetrical Breakdown Voltage&Ultra-Low Capacitance TVS Device

作　　者：徐敏杰 周琼琼 葛伟坡 韩健 XU Minjie;ZHOU Qiongqiong;GE Weipo;HAN Jian(Hangzhou Shilan Multichip Co.,Ltd.,Hangzhou Zhejiang 310018,China)

机构地区：[1]杭州士兰集昕微电子有限公司,浙江杭州310018

出　　处：《电子器件》2021年第4期779-781,共3页Chinese Journal of Electron Devices

摘　　要：针对现有双向TVS的不足及广泛的市场需求,采用集成器件结构和先进工艺研制了一款双向击穿电压7 V,电源Vcc对地GND的电容0.8 pF的超低电容TVS器件。该器件实质是普通二极管和稳压管的串并联电路,反向漏电可达到纳安级,反向动态电阻可达到10Ω以内。芯片尺寸控制在220μm×220μm以内,适合DFN1006、DFN0603等小型封装。利用此特性,该双向超低电容TVS器件适合于高频千兆网口接口的保护,可以避免传输信号丢失。In view of the high capacitance of bidirectional TVS and extensive market demand,a 7 V symmetrical breakdown voltage and 0.8 pF ultra-low capacitance TVS device was developed and fabricated by using integrated device structure and advanced technological process.Its equivalent circuit is essentially a series and parallel circuit of diodes and zener diodes.The reverse leakage of this device is within nano-ampere and the reverse dynamic resistance is less than 10Ω at the same time.The 220μm×220μm chip size suits the package types of DFN1006 and DFN0603.According to such characteristic,this device is convenient for protecting 1000 Mbit Ethemet interface and avoiding signal missing when transmitting.

关 键 词：TVS器件 集成 击穿电压 超低电容 

分 类 号：TN311[电子电信—物理电子学]