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作 者:Huabin Yu Zhongjie Ren Muhammad Hunain Memon Shi Fang Danhao Wang Zhongling Liu Haochen Zhang Feng Wu Jiangnan Dai Changqing Chen Haiding Sun 余华斌;任钟杰;Muhammad Hunain Memon;方师;汪丹浩;刘钟灵;张昊宸;吴峰;戴江南;陈长清;孙海定(School of Microelectronics,University of Science and Technology of China,Hefei 230026,China;Department of Electrical and Computer Engineering,University of California San Diego,La Jolla,CA 92037,USA;Wuhan National Laboratory for Optoelectronics,Huazhong University of Science and Technology,Wuhan 430074,China)
机构地区:[1]School of Microelectronics,University of Science and Technology of China,Hefei 230026,China [2]Department of Electrical and Computer Engineering,University of California San Diego,La Jolla,CA 92037,USA [3]Wuhan National Laboratory for Optoelectronics,Huazhong University of Science and Technology,Wuhan 430074,China
出 处:《Chinese Optics Letters》2021年第8期95-99,共5页中国光学快报(英文版)
基 金:supported by the National Natural Science Foundation of China(No.61905236);the University of Science and Technology of China(No.KY2100000081);the Chinese Academy of Sciences(No.KJ2100230003);the Fundamental Research Funds for the Central Universities(No.WK2100230020);the USTC Research Funds of the Double First-Class Initiative(No.YD3480002002)。
摘 要:The Al Ga N-based deep ultraviolet(DUV)light-emitting diode(LED)is an alternative DUV light source to replace traditional mercury-based lamps.However,the state-of-the-art DUV LEDs currently exhibit poor wall-plug efficiency and low light output power,which seriously hinder their commercialization.In this work,we design and report a tunnel-junctioncascaded(TJC)DUV LED,which enables multiple radiative recombinations within the active regions.Therefore,the light output power of the TJC-DUV LEDs is more than doubled compared to the conventional DUV LED.Correspondingly,the wall-plug efficiency of the TJC-DUV LED is also significantly boosted by 25%at 60 m A.
关 键 词:deep ultraviolet LED tunnel junction wall-plug efficiency ALGAN
分 类 号:TN312.8[电子电信—物理电子学]
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