针对GaN器件的非对称双路同步谐振栅极驱动电路  

Resonant Gate Driver with Asymmetrical Voltage and Two Synchronous Drive Signals for GaN Switches

作　　者：高珊珊 王懿杰[1] 刘怡宁 徐殿国[1] Gao Shanshan;Wang Yijie;Liu Yining;Xu Dianguo(Department of Electrical Engineering,Harbin Institute of Technology,Harbin 150001 China)

机构地区：[1]哈尔滨工业大学电气工程系,哈尔滨150001

出　　处：《电工技术学报》2021年第20期4185-4193,共9页Transactions of China Electrotechnical Society

基　　金：国家自然科学基金资助项目(51777038)。

摘　　要：近年来,氮化镓(GaN)器件凭借其开关速度快、导通电阻小等优点被广泛应用于电力电子变换器中,与此同时,谐振栅极驱动电路也受到广泛的关注,特别是在高开关频率、小功率的应用场合中,用以降低驱动电路的损耗。然而,与硅器件不同的是,GaN器件的开通阈值电压相对较低,且没有体二极管,反向导通压降较大,因此传统的谐振栅极驱动电路不适使用GaN器件。该文针对高频应用场合中寄生参数易引起驱动信号振荡的问题,结合GaN器件特点,提出一种非对称电压的谐振栅极驱动电路。此外,对于需要两个同步开关的应用场合,如开关电感变换器等,采用具有两个二次侧的变压器实现两路隔离同相驱动信号的输出。该文介绍了谐振栅极驱动电路的工作原理,并以效率最优的原则设计电路参数,设计一台开关频率为1MHz的驱动电路样机,并进行实验验证,实验结果与理论分析结果吻合较好。Commercial gallium nitride(GaN)switches are widely used in power electronic converters recently years due to their advantages such as fast switching speed and low turn-on resistance.Accordingly,resonant gate drivers are adopted to reduce drive loss in high frequency and low power applications.However,different from Si switches,the turn-on threshold voltage of GaN switches is quite low and GaN switches have no body diode,which causes large reverse voltage drop.Therefore,traditional resonant gate drivers are not suitable for GaN switches.In order to solve the drive signal oscillation caused by parasitic parameters in high frequency applications,a resonant gate driver with asymmetrical voltage is proposed in this paper.Besides,for applications that require two synchronous switches,such as switch inductor converters,a transformer with two groups of secondary sides is added.The working principles are presented and parameters are optimized for lower loss.A 1MHz prototype is designed for experimental verification.The experimental results are in good agreement with the theoretical analysis.

关 键 词：氮化镓 谐振驱动电路 谐振电感 损耗分析 

分 类 号：TM46[电气工程—电器]