太阳能硅片加工中重金属杂质沾污过程的研究  

Study on Contamination Process of Heavy Metal Impurities in Solar Silicon Wafer Processing

作　　者：牛艳娥[1] 赵芃沛 刘洋 吕梅柏[3] NIU Yan’e;ZHAO Pengpei;LIU Yang;LYU Meibo(Yulin Vocational and Technical College,Yulin 719000,China;Aeronautics and Astronautics Propulsion Research Institute Co.,Ltd.,Xi’an 710103,China;School of Astronautis,Northwestern Polytechnic University,Xi’an 710065,China)

机构地区：[1]榆林职业技术学院,陕西榆林719000 [2]陕西空天动力研究院有限公司材料应用创新中心,西安710103 [3]西北工业大学航天学院,西安710065

出　　处：《兵器装备工程学报》2021年第10期272-276,共5页Journal of Ordnance Equipment Engineering

基　　金：陕西省榆林市2019年科技计划项目(2019-112-03)。

摘　　要：重金属杂质污染会对太阳能硅片性能及寿命产生显著的影响。因此,开展了太阳能硅片加工中的重金属杂质沾污产生过程研究。通过硅片切割清洗前后重金属杂质含量及硅片少子寿命的测试和分析,得出结论是:硅片的切割环节,尤其金刚线的使用是引入重金属杂质的主要原因,且树脂金刚线比电镀金刚线更易引入重金属杂质;相比铁和镍等重金属杂质,铜杂质较难清除;金属铜杂质及恶劣的环境(高温)对硅片少子寿命影响较大;经切割及沾污产生的金属铜杂质仅存在于硅片表面,可通过清洗消除,同时清洗及钝化处理可恢复硅片少子寿命。Heavy metal contamination has a significant effect on the performance and lifetime of solar wafers.Therefore,the research on the process of heavy metal contamination in the processing of solar silicon wafer was carried out.Through the test and analysis of heavy metal impurity content and minority carrier lifetime of silicon wafer before and after cutting and cleaning,it is concluded that:the cutting process of silicon wafer,especially the use of diamond wire,is the main reason of introducing heavy metal impurity,and resin wire is more likely to introduce heavy metal impurity than electroplated wire;Compared with heavy metal impurities such as iron and nickel,copper impurities are more difficult to remove;The minority carrier lifetime of Silicon Wafer is greatly affected by copper impurity and bad environment(high temperature);The copper impurity produced by cutting and contamination only exists on the surface of silicon wafer.It can be eliminated by cleaning,and the minority carrier life of silicon wafer can be restored by cleaning and passivation.

关 键 词：太阳能硅片 重金属杂质 沾污 铜杂质 少子寿命 

分 类 号：TH145.9[一般工业技术—材料科学与工程]