中波PIN结构碲镉汞雪崩器件变温特性的数值模拟研究  

Numerical simulation of high-operating-temperature MWIR HgCdTe APD detectors

作　　者：沈川[1] 杨辽 郭慧君 杨丹 陈路[1,2] 何力 SHEN Chuan;YANG Liao;GUO Hui-Jun;YANG Dan;CHEN Lu;HE Li(Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;Hangzhou Insitute for Advanced Study,University of Chinese Academy of Sciences,Hangzhou 310024,China)

机构地区：[1]中国科学院上海技术物理研究所红外材料与器件重点实验室,上海200083 [2]国科大杭州高等研究院,浙江杭州310024

出　　处：《红外与毫米波学报》2021年第5期576-581,共6页Journal of Infrared and Millimeter Waves

基　　金：中国科学院青年创新促进会项目。

摘　　要：本文对中波HgCdTeAPD进行二维数值模拟,通过与实验结果的对比获得80K下PIN结构的APD器件参数。对不同工作温度下的APD器件暗电流机制进行了研究,发现在高工作温度下,影响暗电流的主要是SRH(小偏压)和雪崩机制(大偏压)。对在高工作温度情况下各层参数的变化引起器件性能的变化进行了研究,对不同层厚度、掺杂浓度对器件性能的影响进行了相应理论计算,并对计算结果进行相应的对比研究,获得了理论上最优化的HgCdTeAPD高温器件结构,为后续高工作温度的APD器件的研发提供重要参考。In this paper,2-D numerical simulation was used to simulate the structure of MWIR HgCdTe APD,and the structural parameters of APD devices at 80K were obtained by comparing with the experimental results.At the same time,the influence of dark current mechanism on APD devices at different operating temperatures was studied.The per‐formance of APD devices with the change of each parameter under the condition of high operating temperature was stud‐ied.We proposed the optimal HgCdTe APD structure for achieving high performance at 150K.The structure provides an important reference for the subsequent development of APD devices with high operating temperature.

关 键 词：HGCDTE APD结构 数值模拟 高工作温度 

分 类 号：O471.5[理学—半导体物理] TN305.3[理学—物理]