纳米盘光子晶体增强Si^(+)/Ni^(+)离子共注入SOI的光致发光  

Effective enhancement of the photoluminescence from the Si^(+)/Ni^(+)ions co-implanted SOI by directly constructing the nanodisk photonic crystals

作　　者：童浩辰 唐淑敏 叶书鸣 段潇潇 李晓南 谢继阳 张璐然 杨杰[1] 邱峰[1] 王荣飞[1] 文小明 杨宇[1] 崔昊杨 王茺[1] TONG Hao-Chen;TANG Shu-Min;YE Shu-Ming;Duan Xiao-xiao;LI Xiao-Nan;XIE Ji-Yang;ZHANG Lu-Ran;YANG Jie;QIU Feng;WANG Rong-Fei;WEN Xiao-Ming;Yang Yu;CUI Hao-Yang;WANG Chong(National Center for International Research on Photoelectric and Energy Materials,School of Materials and Energy,Yunnan University,Kunming 650091,China;Centre for Translational Atomaterials,Swinburne University of Technology,Hawthorn 3122,Australia;College of Electronic and Information Engineering,Shanghai University of Electric Power,Shanghai 200090,China.)

机构地区：[1]云南大学材料与能源学院,国家光电子与能源材料国际研究中心,云南昆明650091 [2]斯威本科技大学平动原子材料中心,澳大利亚霍桑3122 [3]上海电力大学电子与信息工程学院,上海200090

出　　处：《红外与毫米波学报》2021年第5期680-684,共5页Journal of Infrared and Millimeter Waves

基　　金：Supported by the National Natural Science Foundation of China(11564043,11504322,11704330);Joint Foundation of Provincial Sci⁃ence and Technology Department-Double First-class Construction of Yunnan University(2019FY003016);the Reserve Talents of Academic and Technical Leader Project(2017HB001);Young Top Talent Project(YNWR-QNBJ-2018-229);the Application Basic Research Project(2019FB130)of Yunnan Province。

摘　　要：报道了一种在Si^(+)/Ni^(+)离子共注入绝缘体上硅(SOI)基片上直接构筑纳米盘阵列光子晶体以实现SOI光致发光有效增强的方法。通过时域有限差分法(FDTD)设计出具有荧光增强效应的光子晶体结构金属膜,利用Langmuir-Blodgett(LB)方法在Si^(+)/Ni^(+)离子共注入SOI上排列一层聚苯乙烯(PS)小球,接着沉积一层Au薄膜,然后用电感耦合等离子体(ICP)蚀刻技术在SOI晶片顶部形成了纳米盘状的刻蚀Au光子晶体。光致发光(PL)实验表明光子晶体的引入有效增强了缺陷Si薄膜在近红外波段的发光效率。这种工艺简单、成本低且发光增益高的光子晶体在硅基集成光子学上具有重要的应用前景。An effective enhancement of the photoluminescence from the Si^(+)/Ni^(+)ions co-implanted silicon-on-insu⁃lator(SOI)by directly constructing the Au nanodisk-array photonic crystals is reported.The finite-difference time-domain method(FDTD)was employed to design and analyze the luminescence amplification of the metal film with a photonic crystal structure for luminesce from the optical defects in the SOI.The Langmuir-Blodgett(LB)method and inductively coupled plasma(ICP)etching were used to fabricate the etched Au-nanostructure photonic crystal directly on the top of SOI wafers.It indicates that the introduction of polystyrene(PS)spheres can effectively improve the luminescent efficiency in the near infrared waveband.This photonic crystal with sim⁃ply fabricating processes and high efficiency exhibits great application on the optical quantum of Si-based photon⁃ics.

关 键 词：红外物理 光致发光 离子共注入 绝缘体上硅 光子晶体 等离子体 

分 类 号：O433.2[机械工程—光学工程]