GaInP类异质结提升GaInP/GaInAs/Ge太阳电池效率的研究  

Research on improvement of GaInP/GaInAs/Ge solar cell efficiency by GaInP heterojunction-like

作　　者：高慧 杨瑞霞[1] GAO Hui;YANG Ruixia(Hebei University Of Technology,School of Electronic Information Engineering,Tianjin 300401,China;Tianjin Institude of Power Sources,Tianjin 300384,China)

机构地区：[1]河北工业大学电子信息工程学院,天津300401 [2]中国电子科技集团公司第十八研究所,天津300384

出　　处：《电源技术》2021年第10期1324-1326,共3页Chinese Journal of Power Sources

摘　　要：基于不同有序度的GalnP材料制备出高/低带隙的发射区/基区结构被称之为同材料类异质结结构,其产生的特殊能带结构可以提高太阳电池效率。通过生长条件的优化,验证了GaInP材料的有序度变小,材料带隙从优化前1.868 eV提高到1.898 eV。采用该工艺条件制造了具有对应有序度的GalnP材料,分别作为GaInP/GaInAs/Ge三结太阳电池顶子电池的发射区/基区。测试结果表明,与参照电池比较,新结构太阳电池光照电流电压(LIV)特性参数在电流密度方面获得了明显的提高。The high/low bandgap emitter/base structure based on GalnP materials with different ordering ratio was called the same-material heterojunction structure,and the special energy band structure could improve the efficiency of solar cells.In the study,the optimization of the growth conditions first verified that the ordering ratio of the GaInP material was reduced,and the material band gap increased from 1.868 eV to 1.898 eV.Using this process condition,GalnP materials with corresponding ordering ratio were manufactured,which were used as the emitter/base area of the top sub-cell of the GaInP/GaInAs/Ge triple junction solar cell.The test results show that compared with the reference cell,the characteristic parameters of the new solar cell's illumination current and voltage(LIV)are significantly improved in terms of current density.

关 键 词：GAINP 有序度 三结太阳电池 PN结 电流密度 

分 类 号：TM914[电气工程—电力电子与电力传动]