大功率半导体技术现状及其进展  

High Power Semiconductor Technology Status and Progresses

作　　者：刘国友 王彦刚 李想 Arthur SU 李孔竞 杨松霖 LIU Guoyou;WANG Yangang;LI Xiang;Arthur SU;LI Kongjing;YANG Songlin(State Key Laboratory of Advanced Power Semiconductor Devices,Zhuzhou,Hunan 412001,China;Power Semiconductor R&D Centre,Dynex Semiconductor Ltd.,Lincoln LN63LF,United Kingdom)

机构地区：[1]新型功率半导体器件国家重点实验室,湖南株洲412001 [2]丹尼克斯半导体有限公司功率半导体研发中心,英国林肯LN63LF

出　　处：《机车电传动》2021年第5期1-11,共11页Electric Drive for Locomotives

摘　　要：介绍了现代硅基大功率半导体器件的历史演变和新型器件结构的研究进展,以及宽禁带半导体材料和器件的现状;阐述了国内大功率半导体器件在轨道交通、直流输电和新能源汽车等领域的研发进展和应用现状;最后讨论了大功率半导体技术面临的技术挑战和发展趋势。The evolution of modern Si based high power semiconductor devices and recent progress of novel device structures,as well as the status of wide bandgap semiconductor materials and devices were presented in this paper. The development and application status of domestic high power semiconductor devices for rail transportation, DC transmission and new energy vehicles were introduced. Finally, the technology challenges and development trends of high power semiconductor technology were discussed.

关 键 词：功率半导体器件 硅材料 晶闸管 门极可关断晶闸管 集成门极换流晶闸管 绝缘栅双极晶体管 金属氧化物半导体场效应晶体管 宽禁带 

分 类 号：TN303[电子电信—物理电子学]