超结IGBT的结构特点及研究进展  

Structural Features and Recent Progress of Super Junction IGBT

作　　者：张金平[1] 肖翔 张波[1] ZHANG Jinping;XIAO Xiang;ZHANG Bo(State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Scienceand Technology,Chengdu,Sichuan 610054,China)

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《机车电传动》2021年第5期12-20,共9页Electric Drive for Locomotives

基　　金：国家重点研发计划项目(2018YFB1201802);中国博士后科学基金项目(2020M682607)。

摘　　要：随着绝缘栅双极型晶体管(IGBT)技术的发展,目前主流的场截止型结构越来越接近其理论极限。超结被誉为"功率MOS的里程碑",近年来也被引入IGBT以进一步提升器件性能。超结IGBT结合了场截止型IGBT和超结结构的优点,可在更短漂移区长度下实现高耐压和低损耗。然而,作为一种双极型器件,超结IGBT具有与超结MOSFET不同的工作原理。文章从超结原理出发,揭示了超结IGBT的结构特点和工作原理,并对超结IGBT的最新研究进展进行了梳理和概括。With the development of insulated gate bipolar transistor(IGBT) technology, the field stop structure is getting closer to its theoretical limit. Super junction(SJ) is known as "milestone in power MOSFET" and has been introduced in IGBT to further enhance device performance in recent years. Combining the advantages of the field stop IGBT and SJ structure, super junction IGBT(SJ-IGBT) can withstand a high voltage and achieve a low loss with a short drift region length. However, as a bipolar device, the SJ-IGBT has different working principle from the super junction MOSFET. Based on the principle of super junction, the structural characteristics and mechanism were revealed as well as the latest research progress of the SJ-IGBTs was summarized.

关 键 词：超结 绝缘栅双极型晶体管 结构特点 研究进展 

分 类 号：TN325.2[电子电信—物理电子学]