1 200 V SiC MOSFET器件的体二极管抗浪涌能力研究  

Study on Anti-surge Capacity of Body Diode of 1 200 V SiC MOSFET

作　　者：陈超[1] 李旭[1,2] 黄伟 邓小川[1,2] CHEN Chao;LI Xu;HUANG Wei;DENG Xiaochuan(School of Electronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu,Sichuan 610054,China;Institute of Electronic and Information Engineering in Guangdong,University of Electronic Science and Technology of China,Dongguan,Guangdong 523808,China)

机构地区：[1]电子科技大学电子科学与工程学院,四川成都610054 [2]电子科技大学广东电子信息工程研究院,广东东莞523808

出　　处：《机车电传动》2021年第5期33-37,共5页Electric Drive for Locomotives

基　　金：广东省自然科学基金项目(2019A1515012085)。

摘　　要：对1 200 V碳化硅金属氧化物场效应晶体管(SiC MOSFET)(包括双沟槽型栅极结构、非对称沟槽型栅极结构和平面型栅极结构)的抗浪涌能力进行了试验测试分析与评估。其中,平面型SiC MOSFET展现出了最优的抗浪涌能力,最大浪涌电流密度峰值达到了35 A/mm^(2),而双沟槽型与非对称沟槽型SiC MOSFET的抗浪涌能力大致相等,分别为22 A/mm^(2)和25 A/mm^(2)。在经过最大浪涌电流后,3种SiC MOSFET器件的门极阈值电压、漏极电流和击穿电压均发生了失效,其失效原理均为热击穿而导致的三端短路。对比测试结果表明,平面型SiC MOSFET由于较少的栅氧化层缺陷而展现出良好抗浪涌电流能力,而双沟槽型SiC MOSFET由于浪涌应力下的沟道处泄漏电流导致更强的热效应,更容易在浪涌测试中发生失效。The anti-surge capability of the body diode of 1 200 V planar, double trench and asymmetric trench SiC MOSFETs was compared and analyzed by experiment. The planar SiC MOSFET shows the best anti-surge ability, and the maximum surge current density peak reaches 35 A/mm^(2), while the anti-surge ability of double groove and asymmetric groove SiC MOSFET is roughly the same, 22 A/mm^(2) and 25 A/mm^(2) respectively. After the maximum surge current, the threshold voltage, drain current and breakdown voltage of the three SiC MOSFET devices fail. The failure mechanism is a three terminal short circuit caused by thermal breakdown.The comparative test results show that the planar SiC MOSFET shows good anti-surge current ability due to lower gate oxide defects,while the double channel SiC MOSFET is more likely to fail in surge test due to stronger thermal effect caused by channel leakage current under surge stress.

关 键 词：浪涌能力 碳化硅 金属氧化物场效应晶体管 浪涌失效机制 体二极管 

分 类 号：TN386.1[电子电信—物理电子学]