水掺杂对臭氧基原子层沉积二氧化硅钝化特性研究  

STUDY ON PASSIVATION PERFORMANCE OF WATER DOPED OZONE BASED ATOMIC LAYER DEPOSITED SILICON OXIDE FILMS

作　　者：李士正 许佳辉 叶晓军[1] 柳翠[1] 袁晓[1] 李红波[1] Li Shizheng;Xujiahui;YeXiaojun;LiuCui;Yuan Xiao;Li Hongbo(School of Materials Science and Engineering,East China University of Science and Technology,Shanghai 200237,China)

机构地区：[1]华东理工大学材料科学与工程学院,上海200237

出　　处：《太阳能学报》2021年第9期70-74,共5页Acta Energiae Solaris Sinica

基　　金：上海市科学技术委员会科研计划(17DZ1201102);装备预研航天科技联合基金(6141B06310104)。

摘　　要：该文主要研究水掺杂对臭氧基原子层沉积二氧化硅薄膜的影响。通过在臭氧中掺杂少量水作为混合氧化剂,有效降低了原子层沉积二氧化硅薄膜内部碳和氮杂质元素的含量,并提高其成膜速率及薄膜质量;同时,水的掺杂还能够适当提高二氧化硅薄膜内部及其与硅界面处的氢元素浓度,使其具有更强的氢钝化效果。臭氧中掺杂水制备的二氧化硅薄膜能够在较低的退火温度下获得较高的钝化性能;而固定正电荷密度较臭氧制备的二氧化硅薄膜显著降低。The effect of deionized water doping on ozone based atomic layer deposited silicon dioxide films is investigated.Doping a small amount of deionized water in ozone as a mixed oxidant can not only effectively reduce the impurity elements concentration of carbon and nitrogen in the bulk of ALD-SiO2 films,but also improve the deposition rate and film quality.Meanwhile,the doping of deionized water can also appropriately increase the concentration of hydrogen in the bulk of ALD-SiO2 film and at the SiO2/Si interface,effectively improving hydrogen passivation effect.Moreover,the deionized water doped ozone based ALD-SiO2 films exhibit improved passivation performance at lower annealing temperature,and the positive fixed charge density is significantly lower than the ozone based ALD-SiO2 films.

关 键 词：原子层沉积 氧化硅 硅太阳电池 表面钝化 固定正电荷 

分 类 号：TN305.2[电子电信—物理电子学] TM914.4[电气工程—电力电子与电力传动]