纳米SRAM质子单粒子翻转错误率预估  

Prediction of Proton Induced Single Event Upset Error Rates in Nanometer SRAMs

作　　者：赵雯 陈伟[1,2] 王忠明 罗尹虹[1,2] 沈忱 赵军[3] ZHAO Wen;CHEN Wei;WANG Zhong-ming;LUO Yin-hong;SHEN Chen;ZHAO Jun(State Key Laboratory of Intense Pulsed Radiation Simulation and Effect,Xi’an 710024,China;Northwest Institute of Nuclear Technology,Xi’an 710024,China;Cogenda Co.,Ltd,Suzhou 215000,China)

机构地区：[1]强脉冲辐射环境模拟与效应国家重点实验室,西安710024 [2]西北核技术研究所,西安710024 [3]苏州珂晶达电子有限公司,苏州215000

出　　处：《现代应用物理》2021年第3期103-111,共9页Modern Applied Physics

基　　金：国家自然科学基金资助项目(11690043,11690040);国家科技重大专项资助项目(2014ZX01022-301)。

摘　　要：计算分析了高能质子与硅材料核反应产生次级粒子的种类、线性能量传输值和射程,仿真研究了低能质子直接电离的能量沉积与单粒子翻转的内在关联;阐述了质子核反应导致单粒子翻转错误率的预估方法,讨论了低能质子直接电离导致单粒子翻转错误率预估面临的问题;针对不同种类的纳米SRAM预估了3种典型轨道上质子核反应导致的单粒子翻转错误率,研究了轨道环境、太阳活动和器件翻转敏感特性对质子核反应导致的单粒子翻转错误率的影响。In this paper,the mechanisms of single event effects(SEE)induced by high-energy proton nuclear reaction and low-energy proton direct ionization are investigated.The types,linear energy transfer(LET),and ranges of secondary particles produced by the nuclear reaction between high-energy proton and silicon material are calculated and analyzed.The internal relationship between the energy deposition of low-energy proton direct ionization and single event upset(SEU)is simulated and studied;The prediction method of SEU error rates caused by proton nuclear reaction is described,and the problems faced in the prediction of SEU error rates caused by direct ionization of low-energy protons are discussed.For different kinds of nanometer SRAMs,SEU error rates caused by proton nuclear reaction on three typical orbits are estimated.The effects of orbital environment,solar activity,and SEU sensitivity of device on SEU error rates caused by proton nuclear reaction are studied.

关 键 词：质子 单粒子翻转 预估 核反应 直接电离 SRAM 

分 类 号：TN386[电子电信—物理电子学]