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作 者:黄振芬 王贵平[1] Huang Zhen-fen;Wang Gui-ping(Department of Electronic Information and Physics Changzhi University,Changzhi Shanxi 046011)
机构地区:[1]长治学院电子信息与物理系,山西长治046011
出 处:《长治学院学报》2021年第5期15-20,共6页Journal of Changzhi University
基 金:国家自然科学基金项目(201901D211466)。
摘 要:远心度是衡量光学投影曝光光刻机照明系统性能的重要参数,依据光的衍射理论构建了远心度相关的光刻机投影物镜成像模型。通过matlab软件模拟分析了193 nm光刻机照明系统远心度对线条偏移量的影响。仿真结果显示:环形照明时照明系统远心度会造成孤立线条和周期线条发生偏移,远心度越大线条偏移量越大;远心度为10 mrad时,硅片面100 nm的离焦量会使孤立线条和周期线条分别偏移1.3nm和2.61nm,孤立线条偏移量大于周期线条偏移量。仿真结果验证了光刻物镜成像模型的正确性。Telecentricity is an important parameter to evaluate the performance of optical projection lithography.Based on the diffraction theory of light,the telecentricity imaging model of optical projection lithography objective lens is constructed.With the aid of MATLAB software simulation,the effect of telecentricity to lines in 193 nm lithography is studied.The simulation results show that telecentricity of the lighting system will cause the deviation of isolated lines and periodic lines in circular illumination,and the greater the line deviation in direct proportion to the telecentricity.When the telecentric value was10 mrad,a defocus 0.1 nm would offset isolated and periodic lines by 1.3 nm and 2.61 nm,respectively.It is obvious that the isolated line offset is greater than the periodic line offset.The simulation results verify the correctness of the photoresist objective imaging model.
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