硅基MEMS高性能发夹型交叉耦合滤波器  

Silicon-Based MEMS High-Performance Hairpin Cross-Coupling Filter

作　　者：刘恩达 贺萌 赵永志[1] 李光福 赵宇[1] 吴洪江[1] Liu Enda;He Meng;Zhao Yongzhi;Li Guangfu;Zhao Yu;Wu Hongjiang(The 13^(th)Research Institute,CETC,Shijiazhuang 050051,China;The Sixth Military Representative Office of the Rochet Force Equipment in Beijing,Beijing 100043,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]火箭军装备部驻北京地区第六军事代表室,北京100043

出　　处：《半导体技术》2021年第10期774-778,共5页Semiconductor Technology

摘　　要：基于微电子机械系统(MEMS)体硅加工工艺,采用发夹型谐振结构,研制了一款新型带通滤波器。通过在滤波器馈电抽头上加入一段二次谐波频率处对应的1/4波长开路枝节,抑制了二次谐波;同时,在该滤波器非相邻谐振单元间引入一段中心频率处对应1/2波长线,形成了一种特殊的交叉耦合结构,从而在通带两侧添加了一对传输零点,提高了滤波器通带两侧近端的抑制能力。最终研制出的滤波器样品尺寸为6.4 mm×3.0 mm×0.5 mm。经探针测试,该滤波器1 dB带宽为16~18 GHz,中心频率处插入损耗为2.4 dB,在15 GHz处抑制为45 dB,19 GHz处抑制为47 dB,二次谐波抑制为46 dB,并且具有良好的一致性及电磁屏蔽性能。A novel band-pass filter with the hairpin resonant structure was designed and developed based on bulk silicon micro-electromechanical system(MEMS) process.By adding a quarter-wavelength open branch corresponding to the second harmonic frequency to the filter feed tap, the second harmonic suppression was achieved.Meanwhile, a half-wavelength line corresponding to the center frequency between the non-adjacent resonant units of the filter was introduced to form a special cross-coupling structure, thereby adding a pair of transmission zeros on both sides of the passband, which improved the suppression ability at the near ends on both sides of the filter passband.The final filter sample size is 6.4 mm×3.0 mm×0.5 mm.According to the probe test, the 1 dB bandwidth of the filter is 16-18 GHz, the insertion loss at the center frequency is 2.4 dB,the suppression is 45 dB at 15 GHz and 47 dB at 19 GHz, the second harmonic suppression is 46 dB,and the filter also has good consistency and electromagnetic shielding performance.

关 键 词：硅基微电子机械系统(MEMS) 滤波器 谐波抑制 交叉耦合 传输零点 

分 类 号：TN713[电子电信—电路与系统]