Gd_(2)O_(3)掺杂对ZnO压敏电阻片电气性能的影响  

Influence of Doping Gd_(2)O_(3) on the Electrical Properties of ZnO Varistor

作　　者：赵霞 温然 郭璊 李宇鹏 宋继光 郝留成 毛航银 ZHAO Xia;WEN Ran;GUO Men;LI Yupeng;SONG Jiguang;HAO Liucheng;MAO Hangyin(China Electric Power Research Institute,Beijing 100192,China;State Key Laboratory of Electrical Insulation and Power Equipment,Xi'an Jiaotong University,Xi’an 710049,China;Pinggao Group Co.,Ltd.,Pingdingshan 467000,China;Zhejiang Provincial Electric Power Company,Hangzhou 310008,China)

机构地区：[1]中国电力科学研究院有限公司,北京100192 [2]西安交通大学电气设备电力绝缘国家重点实验室,西安710049 [3]平高集团有限公司,河南平顶山467000 [4]国网浙江省电力有限公司,杭州310008

出　　处：《电瓷避雷器》2021年第5期169-175,共7页Insulators and Surge Arresters

基　　金：国家电网有限公司科技项目“高性能氧化锌电阻片材料及生产制造技术”(编号:SGZJ0000KXJS1900180)。

摘　　要：研究了不同掺杂含量的Gd_(2)O_(3)对氧化锌(ZnO)压敏电阻片的电气性能、微观特性、物相特性和介电特性的影响。研究表明,掺杂Gd_(2)O_(3)对ZnO敏电阻片的电气性能具有重要影响,掺杂过量的Gd_(2)O_(3)对ZnO敏电阻片的晶粒生长具有抑制作用,锌填隙浓度提升,具体表现在电位梯度、泄漏电流提升而非线性系数大大减小。而掺杂少量的Gd_(2)O_(3)提升氧空位浓度,减小锌填隙浓度,进而抑制泄漏电流。此时掺杂量在0.5%(摩尔分数)Gd_(2)O_(3)电气参数分别为526 V/mm、15μA/cm^(2)、非线性系数28。该研究可帮助氧化锌压敏电阻优化配方,增强电气性能,改善电力系统的安全稳定性。The effects of Gd_(2)O_(3) with different doping contents on the electrical, microscopic, phase and dielectric properties of ZnO varistors were studied. The results show that the doping of Gd_(2)O_(3) has an important influence on the electrical properties of ZnO varistors. The excessive doping of Gd_(2)O_(3) can inhibit the grain growth of ZnO varistors and facilitate the production of zinc interstitial. As a result, electrical parameters manifest an increase in potential gradient and leakage current, and a sharp decrease in nonlinear coefficient. However, doping a small amount of Gd_(2)O_(3) can increase the oxygen vacancy concentration, reduce the zinc interstitial concentration, and then suppress the leakage current. At this time, when the doping amount is 0. 5% Gd_(2)O_(3), the electrical parameters are 526 V/mm and 15 μA/cm^(2), nonlinear coefficient is 28. The research can help optimize the formula of ZnO varistors, enhance the electrical performance and improve the security and stability of power system.

关 键 词：ZNO压敏电阻片 Gd_(2)O_(3) 电气性能 本征缺陷 

分 类 号：TQ132.41[化学工程—无机化工] TM54[电气工程—电器]