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作 者:胡海帆 马旭明 马喆 王智斌 Hu Haifan;Ma Xuming;Ma Zhe;Wang Zhibin(X Lab,the Second Institute of China Aerospace Science and Technology Corporation,Beijing 100854,China;Electromagnetic Perception Division,Nuctech Company Limited,Beijing 100083,China)
机构地区:[1]中国航天科工集团第二研究院未来实验室,北京100854 [2]同方威视技术股份有限公司电磁感知事业部,北京100083
出 处:《红外与激光工程》2021年第10期314-320,共7页Infrared and Laser Engineering
基 金:北京市青年骨干人才(98.2019-09-111)。
摘 要:在220 GHz二次谐波混频器的设计基础上,提出中频传输波导的垂直转换结构,实现了四通道混频器集成模块方案,缩短了混频器单通道的横向尺寸,为太赫兹接收机系统多通道线阵列集成提供了可行性方案。为优化系统模型的准确性,基于TCAD对肖特基势垒二极管进行三维半导体器件建模计算,依据提取的关键特性参数进行混频器的高频电磁波仿真。通过对该设计方案进行测试,结果表明:当本振频率为110 GHz,功率为7 dBm,射频输入200~240 GHz,混频器的单边带变频损耗为8.6~13 dB,在204~238 GHz的单边带变频损耗为8.6~11.3 dB。当本振频率为108 GHz时,驱动功率仅需3 dBm。此外,基于该混频器模块构建的220 GHz接收机系统,积分时间为700μs时其温度灵敏度为1.3 K。Based on the design of the 220 GHz sub-harmonic mixer, the vertical conversion structure of the IF transmission waveguide was proposed, and the four-channel mixer integration module was realized, the transverse size of the single channel of the mixer was shorten effectively. It provided a feasible scheme for the multi-channel linear array integration of the terahertz receiver system. In order to further optimize the accuracy of the system model, the three-dimensional semiconductor device modeling calculation was carried out for the Schottky-barrier diode based on TCAD, and the high-frequency electromagnetic wave simulation of the mixer was carried out according to the extracted key characteristic parameters. Through the test of the design scheme, the test results show that when the local frequency is 110 GHz, and the power is 7 dBm, the conversion loss of the mixer is 8.6-13 dB as the RF input is 200-240 GHz, and the conversion loss is 8.6-11.3 dB at 204-238 GHz. When the local frequency is 108 GHz, the driving power only needs 3 dBm. In addition, the 220 GHz receiver system based on the mixer module has a temperature sensitivity of 1.3 K as the integration time is 700 μs.
关 键 词:肖特基势垒二极管 220 GHz 二次谐波混频器 线阵列集成 变频损耗
分 类 号:TN454[电子电信—微电子学与固体电子学]
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