低功耗自旋电子器件技术路线及展望  

Technology roadmap and expectation of low-power spintronic devices

作　　者：白月 殷加亮 郭宗夏 曹凯华 赵巍胜 BAI Yue;YIN Jialiang;GUO Zongxia;CAO Kaihua;ZHAO Weisheng(School of Microelectronics,Beihang University,Beijing 100191,China;Beihang-Goertek Joint Microelectronics Institute,Tsingdao Research Institute,Beihang University,Tsingdao 266000,China)

机构地区：[1]北京航空航天大学微电子学院,北京100191 [2]北航歌尔微电子研究院,青岛266000

出　　处：《微纳电子与智能制造》2021年第1期104-128,共25页Micro/nano Electronics and Intelligent Manufacturing

基　　金：国家重点基础研究发展计划、国家自然科学基金(2018YFB0407602、61571023)资助项目。

摘　　要：在大数据时代,传统冯·诺依曼架构在面对海量数据时出现了存储和功耗瓶颈。随着非易失存储器的快速发展,高写入速度、低功耗的磁随机存储器(MRAM)为“存算一体”架构的实现带来了新的曙光。系统地提出了自旋电子器件及其电路结构的技术发展路线,首先介绍已经商业化的Toggle型磁随机存储器(Toggle-MRAM)和自旋转移矩磁随机存储器(STT-MRAM)的基本结构和关键技术;然后介绍自旋轨道矩磁随机存储器(SOT-MRAM)关于无外磁场辅助翻转的重要技术突破;最后总结基于磁隧道结以及新型自旋电子器件的“存算一体”架构和相关应用,并对低功耗计算做出展望。The increasing demand of big-data storage and processing is limited by von-Neumann architecture,causing memory bottleneck and power dissipation.Owing to non-volatility,fast speed,and low-power consumption,magnetic random-access memory(MRAM)is promising to overcome this limitation via in-memory processing(IMP).This paper firstly provides a technology roadmap of spintronic devices for power-efficient computing and relevant integration architectures.Then,the fundamentals of commercialized Toggle-MRAM and spin-transfer torque(STT)-MRAM are introduced.After that,recent experimental breakthroughs of field-free spin-orbit torque(SOT)switching schemes are summarized.Finally,IMP implementations based on magnetic tunnel junctions(MTJs)and novel spintronic devices are discussed,a prospect of future development of powerefficient computing systems is provided as well.

关 键 词：磁随机存储器 自旋转移矩 自旋轨道矩 存算一体 

分 类 号：TP211[自动化与计算机技术—检测技术与自动化装置]