三元硫族半导体化合物K_(2)Zn_(3)S_(4)的制备与光学性质研究  

Synthesis and optical properties of ternary chalcogenide semiconductor K_(2)Zn_(3)S_(4)

作　　者：彭涛 王能能 姜昱丞 赵蒙 姚金雷 PENG Tao;WANG Nengneng;JIANG Yucheng;ZHAO Meng;YAO Jinlei(School of Physical Science and Technology,SUST,Suzhou 215009,China;Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application,SUST,Suzhou 215009,China)

机构地区：[1]苏州科技大学物理科学与技术学院,江苏苏州215009 [2]苏州科技大学江苏省微纳热流技术与能源应用重点实验室,江苏苏州215009

出　　处：《苏州科技大学学报（自然科学版）》2021年第4期44-50,共7页Journal of Suzhou University of Science and Technology（Natural Science Edition）

基　　金：国家自然科学基金资助项目(21771136;51301116)。

摘　　要：通过助溶剂法生长出三元硫化物K_(2)Zn_(3)S_(4)单晶,晶体结构为中心对称的K_(2)Mn_(3)S_(4)型结构,空间群为单斜的P2/c。K_(2)Zn_(3)S_(4)的拉曼特征峰在284 cm^(-1)和315 cm^(-1)处,源于Zn-S键弯曲和伸展的振动模Ag。紫外-可见-近红外光漫反射谱和电子能带计算表明K_(2)Zn_(3)S_(4)属于直接带隙半导体,带隙为3.43 eV。拉曼和红外光谱测量显示K_(2)Zn_(3)S_(4)对波长为2.5~16.7μm的中远红外光具有极好的透过性,在红外光学领域内有潜在的应用前景。Ternary sulfide K_(2)Zn_(3)S_(4) single crystals were grown by flux method.K_(2)Zn_(3)S_(4) crystallizes in the centrosymmetric K_(2)Mn_(3)S_(4)-type structure with monoclinic space group P2/c.The Raman spectrum of K_(2)Zn_(3)S_(4) shows characteristic peaks at 284 and 315 cm^(-1) which are derived from the vibration mode Ag of Zn-S bond bending and stretching.The UV-VIS-NIR diffuse reflectance spectrum and electron band calculations reveal that K_(2)Zn_(3)S_(4) is a direct band gap semiconductor with a band gap of 3.43 eV.The Raman and infrared spectra show that K_(2)Zn_(3)S_(4) has excellent near-infrared transmittance in the wavelength range of 2.5~16.7μm,displaying potential applications in the infrared optics.

关 键 词：助熔剂法 金属硫化物 硫族半导体 宽带隙半导体 

分 类 号：O469[理学—凝聚态物理]