高端电子制造中电镀铜添加剂作用机制研究进展  

Advances in mechanistic understanding of additives for copper electroplating in high-end electronics manufacture

作　　者：吴依彩 毛子杰 王翀 刘欲文[3] 陈胜利[3] 蔡文斌[1] Yicai Wu;Zijie Mao;Chong Wang;Yuwen Liu;Shengli Chen;Wen-Bin Cai(Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials,Collaborative Innovation Center of Chemistry for Energy Materials,Department of Chemistry,Fudan University,Shanghai 200438,China;School of Materials and Energy,University of Electronic Science and Technology of China,Chengdu 610054,China;College of Chemistry and Molecular Sciences,Wuhan University,Wuhan 430072,China)

机构地区：[1]复旦大学化学系,上海市分子催化和功能材料表面重点实验室,上海200438 [2]电子科技大学材料与能源学院,成都610054 [3]武汉大学化学与分子科学学院,武汉430072

出　　处：《中国科学：化学》2021年第11期1474-1488,共15页SCIENTIA SINICA Chimica

基　　金：国家自然科学基金会项目“第四届海峡绿色电子制造学术交流会”;中国科学院学部咨询评议项目“我国电子电镀基础与工业的现状和发展”资助项目.

摘　　要：铜互连电镀是芯片等高端电子器件制造的核心技术之一,明晰相关镀铜添加剂的作用机制将促进先进铜互连技术的发展.本文针对硫酸镀铜体系,侧重从方法学角度总结了加速剂、抑制剂、整平剂三类添加剂的界面吸附结构以及在电镀填铜过程中的微观作用机制,分析讨论了不同研究方法的特点与局限性,并归纳了芯片互连电镀过程中存在的科学问题,为先进制程芯片电镀添加剂的研发提供参考.Copper interconnect electroplating is one of the core technologies for the manufacture of high-end electronic devices including but not limited to chips.To promote the development of advanced copper interconnect process,it is necessary to clarify the mechanisms of copper electroplating additives.Herein,we provide a brief overview of the research progress on the interfacial structures and mechanisms of the three types of additives(accelerator,suppressor and leveler)in copper sulfate plating baths from a methodological perspective.Besides,the advantages and limitations of different research methods are discussed and the scientific issues related to the Damascene copper electroplating are summarized,to afford a hint for the further research and development of the additives in advanced chip fabrication.

关 键 词：电子制造 电镀铜 添加剂 超级填充 

分 类 号：TN405[电子电信—微电子学与固体电子学] TQ153.14[化学工程—电化学工业]