一种改进的高频GaN HEMT器件模型  

An Improved High Frequency Model for GaN HEMT

作　　者：余国栋 汪珍胜[1] 王储君[1] 王维波[1] 陶洪琪[1] YU Guodong;WANG Zhensheng;WANG Chujun;WANG Weibo;TAO Hongqi(Nanjing Electronic Devices Institute,Nanjing,210016,CHN)

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2021年第5期354-358,共5页Research & Progress of SSE

摘　　要：提出了一种改进的氮化镓高电子迁移率晶体管(GaN HEMTs)的小信号和大信号模型。该小信号模型通过改进拓扑结构来提升对高频下分布式效应的拟合,对比栅宽为4×30μm的100 nm栅长GaN HEMT器件,在110 GHz内的平均拟合误差为3.48%。在非线性电流模型中,改进的电流方程提升了对低栅压下直流I-V特性的拟合精度,通过结合非线性电容模型,构建了GaN HEMT大信号模型。对比35 GHz负载牵引系统的测试数据,大信号模型仿真结果表明,改进的非线性模型对GaN HEMT大信号特性有良好的预测能力。A practical model for the gallium nitride high electron mobility transistors(GaN HEMTs)with small and large signal was proposed in this paper.In order to fit the high frequency distributed effect in the small-signal model,the topological structure was modified.Compared with a 4×30μm gate-width and 100 nm gate-length GaN HEMT,the average fitting error in 110 GHz is 3.48%.In the nonlinear current model,the modified current equation improves the fitting of the DCI-V characteristics at low gate voltage.Combined with the nonlinear capacitance model,the GaN HEMT large-signal model was built.By comparing with the loadpull results at 35 GHz,the simulation results of large-signal model show that the improved nonlinear model has a good precision for large signal characteristics of GaN HEMT.

关 键 词：GaN HEMT 小信号模型 大信号模型 负载牵引 

分 类 号：TN386[电子电信—物理电子学]