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作 者:王乔楠[1] 王生明 邓世雄[1] WANG Qiaonan;WANG Shengming;DENG Shixiong(The 13th Research Institute,CETC,Shijiazhuang,050051,CHN)
机构地区:[1]中国电子科技集团公司第十三研究所,石家庄050051
出 处:《固体电子学研究与进展》2021年第5期365-369,387,共6页Research & Progress of SSE
摘 要:针对ADC对线性限幅器线性度的不同需求,而开启功率电平是影响限幅器线性度的关键参数,探究了GaAs和Si基PIN二极管限幅器在30~300 MHz频率内的开启功率电平。提出多颗二极管堆叠的限幅器结构,提高了限幅器的开启功率电平,从而改善了限幅器的线性度。测试结果表明:在30~300 MHz频率下,采用自研和M/A-COM的PIN二极管堆叠结构的限幅器插损≤0.2 dB,回波损耗≥19 dB,相较于未堆叠结构开启功率电平提高了8~9 dB。该研究证明堆叠结构可以有效改善线性限幅器的线性度。With the different demands linearity of linear limiters that ADCs needed,and the threshold power level was a key parameter in linear limiters,the thresholds of two linear limiters using GaAs and silicon PIN diodes had been researched in this article from 30 MHz to 300 MHz.A stacked structure of PIN diodes was presented,which increased the limiter’s threshold thereby improved the linearity of the limiter.The experimental results show that from 30 MHz to 300 MHz,the limiter insertion loss of the stacked structure using self-designed PIN diodes and M/A-COM PIN diodes is less than 0.2 dB,and the return loss is better than 19 dB,the threshold is 8~9 dB higher than the threshold of the unstacked structure.This study shows that the linearity can be successfully improved by means of the stacked structure.
分 类 号:TN40[电子电信—微电子学与固体电子学]
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