一种宽带高线性度射频放大器  

A broadband high linearity RF amplifier

作　　者：张博 贺城峰 吴昊谦 ZHANG Bo;HE Chengfeng;WU Haoqian(School of Electronic Engineering,Xi􀆳an University of Posts and Telecommunications,Xi􀆳an710121,China)

机构地区：[1]西安邮电大学电子工程学院,陕西西安710121

出　　处：《电子元件与材料》2021年第11期1101-1106,共6页Electronic Components And Materials

基　　金：陕西省重点研发计划(2018ZDXM-GY-010);西安市集成电路重大专项(201809174CY3JC16);陕西省创新人才推进计划-科技创新团队(2020TD-019);陕西省教育厅重点科学研究计划(20JY059)。

摘　　要：采用0.5μm GaAs E-pHEMT工艺设计了一种0.1~6 GHz的高线性度射频放大器。结合达林顿电路与共源共栅电路结构,提出了一种新型放大器电路结构,以提高增益平坦度和扩展带宽。同时,针对线性度较低的问题,在有源反馈偏置电路中采用了并联反馈电容的方法来抑制谐波分量的影响,从而提高放大器的线性度。仿真结果显示:在放大器的工作频段内,小信号增益为22.5 dB,增益平坦度为±0.5 dB,噪声系数小于1.7 dB。在频率为4.2 GHz处OIP3可达48 dBm,0.8 GHz处P_(1dB)可达21.4 dBm。版图尺寸为0.85 mm×0.85 mm。A 0.1-6 GHz high linearity radio frequency amplifier was designed using 0.5μm GaAs E-pHEMT process.By combined the Darlington circuit and the cascode circuit structure,a new type of amplifier circuit structure was proposed to improve the gain flatness and expand the bandwidth of the amplifier.At the same time,for the problem of low linearity,a parallel feedback capacitor was used in the active feedback bias circuit to suppress the influence of harmonic components,thus to improve the linearity of the amplifier.The simulation results show that in the working frequency band of the amplifier,the small signal gain is 22.5 dB,the gain flatness is±0.5 dB,and the noise figure is less than 1.7 dB.OIP3 can reach 48 dBm at 4.2 GHz,and P_(1dB) can reach 21.4 dBm at 0.8 GHz.The layout size is 0.85 mm×0.85 mm.

关 键 词：高线性度 达林顿 共源共栅 偏置电路 射频放大器 

分 类 号：TN722.5[电子电信—电路与系统]