一种集成无源电容式高硅铝合金基微波功率芯片载体技术  

A passive capacitance integrated and high Si-Al alloy based microwave power chip carrier technology

作　　者：刘米丰 任卫朋 赵越 陈韬 王盈莹 LIU Mifeng;REN Weipeng;ZHAO Yue;CHEN Tao;WANG Yingying(Shanghai Aerospace Electronic Communication Equipment Research Institute,Shanghai201109,China)

机构地区：[1]上海航天电子通讯设备研究所,上海201109

出　　处：《电子元件与材料》2021年第11期1112-1117,共6页Electronic Components And Materials

基　　金：国家科技重大专项(02专项)(2014ZX02501016);上海航天电子通讯设备研究所博士创新基金(DZS-BS-2019-08)。

摘　　要：提出了一种应用于高功率微波组件的集成无源电容式高硅铝合金基芯片载体技术。首先,利用化学机械抛光、磁控溅射和阳极氧化技术,在高硅铝合金衬底上制备出基于Ta_(2)O_(5)-Al_(2)O_(3)混合介质层的薄膜电容,比容量测试结果约为7μF/mm^(2)。然后,在薄膜电容制备工艺基础上,结合光刻、刻蚀和图形电镀等技术,在高硅铝合金圆片表面同时加工出薄膜电容、电源导线以及共晶焊接膜层等结构,从而完成一体化集成功率芯片载体制备。最后,开展了芯片载体在微波发射组件中的应用验证,发射功率测试结果为9.8 W(通道1#)/9.6 W(通道2#),杂散抑制测试结果为-76.24 dB(通道1#)/-75.09 dB(通道2#),均满足组件设计指标要求。An integrated passive capacitance chip carrier technology based on high Si-Al alloy for high power microwave module was proposed.Firstly,the Ta_(2)O_(5)-Al_(2)O_(3) dielectric layer capacitance was prepared on high Si-Al alloy substrate by chemical mechanical polishing(CMP),magnetic sputtering,anodizing and electroplating.The test result of specific capacity is about 7μF/mm^(2).Then,thin film capacitance,power interconnect line and eutectic film were fabricated at the same time by lithography,etching and graphic electroplating,and the integrated power chip carrier was prepared.Finally,two chip carriers were assembled into a microwave module.The test results of transmission power and spurious suppression are 9.8 W(channel 1#)/9.6 W(channel 2#)and-76.24 dB(channel 1#)/-75.09 dB(channel 2#),respectively.

关 键 词：芯片载体 高硅铝合金 薄膜电容 微波组件 

分 类 号：TN05[电子电信—物理电子学]