基于氮化镓单晶的垂直p-i-n二极管性能研究  

Study on Vertical Ga N p-i-n Diode Based on Free-standing Ga N Substrates

作　　者：张敏[1,2] 金浩妮 万飞 宗平 白煜 ZHANG Min;JIN Haoni;WAN Fei;ZONG Ping;BAI Yu(School of Mechanical Engineering,Xi'an 710000,CHN;School of Nanoscience and Engineering Technology(Suzhou),Suzhou 215123,CHN;School of Material Science and Engineering,Xi'an Jiaotong University,Xi'an 710000,CHN)

机构地区：[1]西安交通大学机械工程学院,西安710000 [2]西安交通大学纳米科学与工程技术学院(苏州),江苏苏州215123 [3]西安交通大学材料科学与工程学院,西安710000

出　　处：《半导体光电》2021年第5期620-623,共4页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(22005237);江苏省自然科学基金项目(BK20191188,BK20190221);江苏省引智项目(BX2020032)。

摘　　要：利用高质量自支撑Ga N衬底,通过外延方法制备了垂直结构的Ga N基p-i-n型二极管结构。通过对材料结构、杂质浓度分布以及对器件整流特性的研究,探究了影响垂直结构器件特性的关键因素。结果表明,在同质外延的制备过程中,衬底表面的粗糙程度将使制备的环形结构具有不规则形状,这种不规则电极对垂直结构器件的性能将产生不利影响;此外,多种杂质在界面处聚集,进而形成平面漏电通道,是降低器件耐压值的主要因素。A Ga N-based p-i-n diode with vertical structure was fabricated with epitaxial method by using high quality free-standing Ga N substrate.Based on studing the material structure,impurity concentration and current-voltage characteristics,the key factors affecting the performance of the vertical structure device were analyzed.Experimental results indicate that the roughness of the surface will cause the irregular shape of the annular structure,which plats a negative effect on the ohmic contact and performance of the vertical structure device.In addition,during the growth process,a variety of impurities will gather at the interface and form a planar leakage channel,which will dominantly limit the performance of the device.

关 键 词：Ga N P-I-N 垂直结构 反向漏电 

分 类 号：TN364[电子电信—物理电子学]