双靶共溅射制备AZO薄膜的光电性能研究  

Study on Optical and Electrical Properties of AZO Films Prepared by Co-sputtering with Two Targets

作　　者：冯媛媛 邓军 许晓芳 贺鑫 宋钊 FENG Yuanyuan;DENG Jun;XU Xiaofang;HE Xin;SONG Zhao(Key Laboratory of Optoelectronic Technology,Ministry of Education,Faculty of Information,Beijing University of Technology,Beijing 100124,CHN)

机构地区：[1]北京工业大学信息学部光电子技术教育部重点实验室,北京100124

出　　处：《半导体光电》2021年第5期656-661,共6页Semiconductor Optoelectronics

摘　　要：采用双靶共溅射的方法制备了光电性能较好的掺Al氧化锌(AZO)薄膜,利用X射线衍射仪、霍尔测试仪、SEM等多种技术手段研究了不同的Al溅射功率和快速退火条件对AZO薄膜的影响,发现AZO薄膜在Al溅射功率为15W、退火温度为400℃时性能最佳。当Al溅射功率为15W时,其电阻率最低为6.552×10^(-4)Ω·cm,可见光波段(400~700nm)平均透过率超过92%。随着Al溅射功率的增大,可见光波段的透过率逐渐减小,红外波段(2.5~20μm)的透过率逐渐增大,最大为40%。In this paper,Al-doped Zn O(AZO)films with better photoelectric properties were prepared by the dual-target co-sputtering method.Various technical methods such as X-ray diffractometer,Hall tester and SEM were used to study the influence of different Al sputtering power and rapid annealing conditions on the performance of AZO film.It is found that the AZO films present the best performance when the Al sputtering power is 15 W and the annealing temperature is 400℃.When the Al sputtering power is 15 W,its lowest resistivity is 6.552×10^(-4)Ω·cm,and the average transmittance in the visible light band(400~700 nm)exceeds 92%.With the increase of Al sputtering power,the transmittance in the visible light band gradually decreases,while the transmittance in the infrared band(2.5~20μm)gradually increases,and the maximum value reaches 40%.

关 键 词：AZO薄膜 双靶共溅射 Al溅射功率 快速退火 红外 

分 类 号：TB383.2[一般工业技术—材料科学与工程] TM914.4[电气工程—电力电子与电力传动]