直流磁控溅射制备Zr-B-O薄膜及其热稳定性  

Preparation and thermal stability of Zr-B-O thin films by DC magnetron sputtering

作　　者：孟瑜 宋忠孝[2] 畅庚榕[1] 刘明霞[1] 成桢[1] 徐可为[1] MENG Yu;SONG Zhong-xiao;CHANG Geng-rong;LIU Ming-xia;CHENG Zhen;XU Ke-wei(Shaanxi Key Laboratory of Surface Engineering and Remanufacturing,Xi’an University,Xi’an 710065,China;State Key Laboratory for Mechanical Behavior of Materials,Xi’an Jiaotong University,Xi’an 710049,China)

机构地区：[1]西安文理学院陕西省表面工程与再制造重点实验室,陕西西安710065 [2]西安交通大学金属材料强度国家重点实验室,陕西西安710049

出　　处：《材料热处理学报》2021年第11期124-130,共7页Transactions of Materials and Heat Treatment

基　　金：陕西省自然科学基金(2020JQ-889,2018JQ5173,2021JM-512);陕西省教育厅科技项目(19JS056,21JS036);西安市科技计划项目(2019KJWL24)。

摘　　要：利用直流磁控溅射技术在Si(100)基底上制备了不同偏压的Zr-B-O和Cu/Zr-B-O薄膜体系,采用扫描电镜(SEM)、X射线衍射(XRD)和透射电镜(TEM)等对薄膜样品的微观组织形貌和热稳定性进行表征分析。结果表明:不同偏压得到的Zr-B-O薄膜均为非晶结构,薄膜表面平整,膜厚均匀,膜基结合良好,薄膜方阻随偏压增加而减小;当退火温度低于750℃时,Cu膜表面完整连续,方阻较小,750℃退火后,由于Cu膜严重聚集并出现孔洞导致薄膜不连续而使电阻增加,但未发生Cu与Si的扩散,说明非晶Zr-B-O薄膜仍可以有效阻挡扩散。Zr-B-O and Cu/Zr-B-O thin films with different bias voltages were prepared on Si(100)substrate by DC magnetron sputtering,and microstructure and thermal stability of the films were characterized by means of scanning electron microscopy(SEM),X-ray diffraction(XRD)and transmission electron microscopy(TEM).The results show that the Zr-B-O film deposited with different bias voltages is amorphous,the film surface is flat,the film thickness is uniform,the film is well bonded with the substrate,and the sheet resistance of the film decreases with the increase of bias voltage.When the annealing temperature is lower than 750℃,the Cu/Zr-B-O thin film surface is complete and continuous,and the sheet resistance is small.After annealing at 750℃,the sheet resistance increases sharply due to the discontinuity of Cu film caused by serious aggregation and holes,but the diffusion of Cu and Si does not occur,indicating that amorphous Zr-B-O thin film can still effectively block the atomic diffusion.

关 键 词：Zr-B-O薄膜 直流溅射 偏压 微观结构 热稳定性 

分 类 号：TG174.44[金属学及工艺—金属表面处理]