晶体硅太阳电池研究进展  

RESEARCH PROGRESS OF CRYSTALLINE SILICON SOLAR CELLS

作　　者：张云龙[1,2] 陈新亮 周忠信[1,2] 赵颖 张晓丹[1,2] Zhang Yunlong;Chen Xinliang;Zhou Zhongxin;Zhao Ying;Zhang Xiaodan(Institute of Photoelectronics Thin Film Devices and Technology of Nankai University,Tianjin 300350,China;Key Laboratory of Photoelectronics Thin Film Devices and Technology of Tianjin,Tianjin 300350,China)

机构地区：[1]南开大学光电子薄膜器件与技术研究所,天津300350 [2]天津市光电子薄膜器件与技术重点实验室,天津300350

出　　处：《太阳能学报》2021年第10期49-60,共12页Acta Energiae Solaris Sinica

基　　金：国家重点研发计划(2018YFB1500103)。

摘　　要：主要介绍太阳电池基本原理和晶体硅基本性质,并从少子复合的角度分析了氧化物钝化层对太阳电池性能的影响;重点阐述4种典型晶体硅太阳电池的研究现状,并详细分析其获得高效率的物理机制:1)钝化发射极型太阳电池采用背部重掺杂点接触的结构,减少晶体硅与金属的接触面积来降低复合损耗;2)硅异质结(SHJ)型太阳电池的本征非晶硅薄层提供了良好的钝化效果,同时晶体硅与非晶硅间的异质接触使得器件的开路电压相对更高;3)隧穿氧化层钝化接触(TOPCon)型太阳电池采用超薄隧道氧化物(SiO_(x))和磷掺杂硅层,显著地减少了金属-半导体界面处的表面复合;4)新型选择性接触(selective contact)型太阳电池(如DASH电池)采用低温无掺杂的金属氧化物作为电子/空穴选择层,实现了对光生载流子的有效收集。In this article,we mainly introduce basic working principle of solar cells and properties of c-Si,as well as discuss the effects of oxide passivation layer on c-Si solar cells from the perspective of the minority carrier recombination.Research status and perspective of four typical c-Si solar cells are reviewed and the corresponding physical mechanisms for achieving high efficiency are discussed:1)The passivated emitter solar cells adopt a heavily doped point contact structure on the back to reduce the contact area between the c-Si and metal to reduce recombination loss;2)Intrinsic amorphous silicon thin layers of the silicon heterojunction(SHJ)solar cells provide high quality interface passivation and the heterogeneous contact between the c-Si and the amorphous silicon enhances the open circuit voltage(V_(oc))of the devices;3)Tunnel oxide passivated contact(TOPCon)solar cells are based on an ultra-thin tunnel oxide(SiO_(x))and a phosphorus-doped silicon layer,which significantly lowers the surface recombination at the metal-semiconductor interface;and 4)Novel selective contact solar cells(like DASH device)uses low temperature dopant-free metal oxide as an electron/hole selective layer to achieve efficient collection for photogenerated carriers.

关 键 词：太阳电池 晶体材料 异质结 半导体器件 

分 类 号：TM914.4[电气工程—电力电子与电力传动]