基于硅基WLP封装的深孔刻蚀工艺研究  

A Study on the Deep Etching Technology for WLP Package

作　　者：倪烨 徐浩 孟腾飞 袁燕 王君 张玉涛 NI Ye;XU Hao;MENG Tengfei;YUAN Yan;WANG Jun;ZHANG Yutao(Beijing Institute of Radio Measurement,Beijing 100854,China)

机构地区：[1]北京无线电测量研究所,北京100854

出　　处：《材料导报》2021年第S02期110-114,共5页Materials Reports

摘　　要：本工作针对硅基晶圆级封装(WLP,Wafer level package)的关键工艺技术——深孔刻蚀工艺进行了研究,通过对掩蔽层材料的选择和图形化工艺研究,制备出满足深孔刻蚀工艺要求的掩蔽层,并采用干法刻蚀设备进行深孔刻蚀和工艺优化,最终制作出工艺指标为:刻蚀深度185μm、深宽比9∶1、陡直度90.08°、侧壁粗糙度小于64 nm、选择比46∶1的硅深孔样品。该深孔刻蚀工艺可应用于薄膜体声波滤波器(FBAR,Film bulk acoustic resonator)晶圆级封装工艺的硅通孔互联(TSV,Through silicon via)技术中。This paperis focuses on the key technology of the silicon⁃based WLP(Wafer Level Package)--The deep hole etching technology.Through the selection of masking layer materials and the study of graphic process,the masking layer which meets the requirements of the deep hole etching process is prepared.The deep hole etching and process parameters are optimized by etching equipment,and the process parameters are:the etch depth is 185μm,the aspect ratio is 9∶1,the profile is 90.08°,the scallop size is less than 64 nm,and the selectivity to PR is 46∶1.The deep hole etching technology can be applied to the TSV(Through Silicon Via)interconnection technology of wafer level packa⁃ging technology of FBAR(Film Bulk Acoustic Resonator).

关 键 词：晶圆级封装 深孔刻蚀 硅通孔互联 

分 类 号：TN305[电子电信—物理电子学]