6.5 kV SiC光控晶闸管的研制  

Investigation on 6.5 kV SiC Light-Triggered Thyristor

作　　者：杨燎 陈宏[1] 郑昌伟 白云[1] 杨成樾[1] Yang Liao;Chen Hong;Zheng Changwei;Bai Yun;Yang Chengyue(Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;School of Microelectronics,University of Chinese Academy of Sciences,Beijing 100049,China;Zhuzhou CRRC Times Semiconductor Co.,Ltd.,Zhuzhou 412001,China)

机构地区：[1]中国科学院微电子研究所,北京100029 [2]中国科学院大学微电子学院,北京100049 [3]株洲中车时代半导体有限公司,湖南株洲412001

出　　处：《半导体技术》2021年第11期861-865,共5页Semiconductor Technology

摘　　要：基于Sentaurus TCAD软件,研制了一款6.5 kV SiC光控晶闸管。通过优化雪崩击穿模型,对多层外延材料的规格及渐变终端技术进行研究,有效抑制了芯片表面峰值电场,实现了6.5 kV的耐压设计;此外结合实际应用需求,对器件的开通特性进行了仿真模拟。在4英寸(1英寸=2.54 cm)SiC工艺平台制备了6.5 kV SiC光控晶闸管,并对器件性能进行了测试。测试结果显示,芯片击穿电压超过6.5 kV,在4 kV电源电压以及365 nm波长紫外光触发的条件下,器件导通延迟约为200 ns,脉冲峰值电流约为2.1 kA,最大导通电流变化率(di/dt)达到6.3 kA/μs,测试结果与仿真模拟结果基本一致。A 6.5 kV SiC light-triggered thyristor(LTT)was designed and developed based on Sentaurus TCAD software.By optimizing the avalanche breakdown model,the specification of multilayer epitaxial material and gradient terminal technology were studied,which effectively suppressed the peak surface electric field,and the breakdown voltage of 6.5 kV was realized.Furthermore,the switch-on characteristics of the LTT were simulated according to actual needs.The 6.5 kV SiC LTT was fabricated on the 4 inch(1 inch=2.54 cm)SiC process platform,and the device performances were measured.The measured results show that the breakdown voltage of the chip is above 6.5 kV.Under a supply voltage of 4 kV and controlled by an ultraviolet light of 365 nm wavelength,the switch-on delay of the device is about 200 ns and the peak pulse current achieves about 2.1 kA,and the maximum conduction current rate(di/dt)is 6.3 kA/μs,the measured results are almost in good agreement with the simulated results.

关 键 词：碳化硅(SiC) 光控晶闸管(LTT) 脉冲开关 击穿电压 电流变化率(di/dt) 

分 类 号：TN342.7[电子电信—物理电子学]