GaN HEMT外延材料表征技术研究进展  

Research Progress on Characterization Technologies of GaN HEMT Epitaxial Materials

作　　者：杜成林 蔡小龙 叶然 刘海军[2] 张煜[2] 段向阳[2] 祝杰杰 Du Chenglin;Cai Xiaolong;Ye Ran;Liu Haijun;Zhang Yu;Duan Xiangyang;Zhu Jiejie(State Key Laboratory of Mobile Network and Mobile Multimedia Technology,Shenzhen 518055,China;ZTE Corporation,Nanjing 210012,China;School of Microelectronics,Xidian University,Xi’an 710071,China)

机构地区：[1]移动网络和移动多媒体技术国家重点实验室,广东深圳518055 [2]中兴通讯股份有限公司,南京210012 [3]西安电子科技大学微电子学院,西安710071

出　　处：《半导体技术》2021年第11期899-908,共10页Semiconductor Technology

基　　金：中央高校平台及学科重点建设项目(QTZX2172);ZTE产学研合作项目(HX01202005041)。

摘　　要：氮化镓(GaN)作为第三代半导体材料的典型代表,具有高击穿电场强度和高热导率等优异的物理特性,是制作高频微波器件和大功率电力电子器件的理想材料。GaN外延材料的质量决定了高电子迁移率晶体管(HEMT)的性能,不同材料特征的表征需要不同的测量工具和技术,进而呈现器件性能的优劣。综述了GaN HEMT外延材料的表征技术,详细介绍了几种表征技术的应用场景和近年来国内外的相关研究进展,简要总结了外延材料表征技术的发展趋势,为GaN HEMT外延层的材料生长和性能优化提供了反馈和指导。Gallium nitride(GaN)is a typical representative of the third generation of semiconductor materials and has excellent physical properties such as high breakdown electric field intensity and high thermal conductivity.It is an ideal material for fabricating high-frequency microwave devices and highpower electronic power devices.The quality of GaN epitaxial materials determines the performance of high electron mobility transistors(HEMTs).The characterization of different material features requires different measurement tools and technologies,so as to show the advantages and disadvantages of device performance.The characterization technologies of GaN HEMT epitaxial materials are reviewed.Application scenarios and the related research progress of these characterization techniques in recent years are introduced in detail,and the development trends of characterization technologies are briefly summarized,which provides feedback and guidance for the material growth and performance optimization of GaN HEMT epitaxial layers.

关 键 词：氮化镓(GaN) 高电子迁移率晶体管(HEMT) 外延材料 表征技术 缺陷分析 

分 类 号：TN307[电子电信—物理电子学] TN386