一种具有变深槽电容的横向功率p-MOSFET  

A Lateral Power p-MOSFET with Variable Deep-Trench Capacitance

作　　者：程骏骥 武世英 陈为真 李欢 杨洪强 CHENG Junji;WU Shiying;CHEN Weizhen;Li Huan;YANG Hongqiang(Institute of Fundamental and Frontier Sciences,Univ.of Elec.Sci.and Technol.of China,Chengdu 610054,P.R.China;State Key Lab.of Elec.Thin Films and Integr.Dev.,Univ.of Elec.Sci.and Technol.of China,Chengdu 610054,P.R.China;Dongguan Institute of Opto-Electronics,Peking University,Dongguan,Guangdong 523808,P.R.China;China ZhenHua Group YongGuang Electronics Co.,Ltd.,Guiyang550018,P.R.China)

机构地区：[1]电子科技大学基础与前沿研究院,成都610054 [2]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054 [3]北京大学东莞光电研究院,广东东莞523808 [4]中国振华集团永光电子有限公司,贵阳550018

出　　处：《微电子学》2021年第5期712-716,共5页Microelectronics

基　　金：中国博士后科学基金资助项目(2020M683286);四川省科技计划资助项目(2021YJ0373)。

摘　　要：提出了一种含介质深槽的横向p沟道功率MOSFET(p-MOSFET)。深槽内填充了线性组合的高介电常数(high-k)介质和二氧化硅,以调变寄生的深槽电容(C_(DT)),使C_(DT)充电电荷增大且使该充电电荷沿纵向接近均匀分布。在深槽一侧,通过提高p型漂移区剂量来提供负极板充电电荷,在深槽另一侧,通过增设n型区来提供正极板充电电荷。两侧漂移区的电荷补偿效应均得到增强,器件性能获得提高。仿真结果表明,当击穿电压V_(B)为450V时,器件的比导通电阻R_(ON,SP)为9.5mΩ·cm^(2),优值达21.3MW/cm^(2),优值为现有器件的2.7倍。该项研究成果为功率集成电路提供了更优的器件选择。A novel lateral p-channel power MOSFET(p-MOSFET)with a deep trench was proposed.The deep trench was filled with a linear combination of high-k dielectric and SiO_(2),which contributed to increasing the deep trench parasitic capacitance(C_(DT))and adjusting it to being nearly uniform along the vertical direction.On one side of the deep trench,the negative plate charging charge was provided by increasing the dose of p-type drift zone,and on the other side of the deep trench,the positive plate charging charge was provided by adding n-type zone.The charge compensation effect in both drift regions were enhanced,and the device performance was improved.The simulation results showed that the proposed device had an R_(ON,SP) of 9.5mΩ·cm^(2) at a V_(B) of 450V.The figure of merit was 21.3MW/cm^(2),and it was 2.7times that of existing device.The research results provide a better device selection for power integrated circuits.

关 键 词：深槽 P-MOSFET high-k介质 电荷补偿 

分 类 号：TN386.1[电子电信—物理电子学]