GaN HEMT器件的电流崩塌效应分析  

Analysis of Current Collapse Effect of GaN HEMT Devices

作　　者：赵宏美 冯全源[1] 文彦 ZHAO Hongmei;FENG Quanyuan;WEN Yan(Microelectronics Research Institute,Southwest Jiaotong University,Chengdu 611759,P.R.China)

机构地区：[1]西南交通大学微电子研究所,成都611756

出　　处：《微电子学》2021年第5期734-738,共5页Microelectronics

基　　金：国家自然科学基金重点项目(61531016,62031016,61831017);四川省重大科技专项项目(2018GZDZX0038,2018GZDZX0001);四川省重点项目(2019YFG0498,2020YFG0282,2020YFG0028)。

摘　　要：研究了氮化镓高电子迁移率晶体管(GaN HEMT)的温度特性,分析了自热效应造成GaN HEMT的电流崩塌现象。提出了一种图形化衬底技术来降低器件温度。在缓冲层与衬底界面设置与缓冲层同材料的梯形微阱,在势垒层与钝化层界面设置无掺杂和低Al组分的AlGaN矩形微阱。结果表明,与无微阱结构器件相比,新型有微阱结构器件的温度峰值降低了18.148K,电流崩塌效应改善比值达20.64%。The temperature characteristics of GaN HEMT were studied.And the current collapse phenomenon due to self-heating effect of GaN HEMT was analyzed.A graphical substrate technique was proposed to reduce the device temperature.The trapezoidal micropits with the same material as the buffer layer were set at the interface between the buffer layer and the substrate,and the AlGaN rectangular micropits with no doping and low Al component were set at the interface between the barrier layer and the passivation layer.The results showed that,compared with that of the device without micropits structure,the peak temperature of the new micropits structure device decreased by 18.148K,and the improvement ratio of current collapse effect was 20.64%.

关 键 词：GaN HEMT 自热效应 电流崩塌 微阱 

分 类 号：TN386.3[电子电信—物理电子学]