Preparation of graphene on SiC by laser-accelerated pulsed ion beams  

作　　者：Danqing Zhou Dongyu Li Yuhan Chen Minjian Wu Tong Yang Hao Cheng Yuze Li Yi Chen Yue Li Yixing Geng Yanying Zhao Chen Lin Xueqing Yan Ziqiang Zhao 周丹晴;李东彧;陈钰焓;吴旻剑;杨童;程浩;李昱泽;陈艺;李越;耿易星;赵研英;林晨;颜学庆;赵子强(State Key Laboratory of Nuclear Physics and Technology,Peking University,Beijing 100871,China;Beijing Laser Acceleration Innovation Center,Huairou,Beijing 101400,China;Institute of Guangdong Laser Plasma Technology,Guangzhou 510540,China)

机构地区：[1]State Key Laboratory of Nuclear Physics and Technology,Peking University,Beijing 100871,China [2]Beijing Laser Acceleration Innovation Center,Huairou,Beijing 101400,China [3]Institute of Guangdong Laser Plasma Technology,Guangzhou 510540,China

出　　处：《Chinese Physics B》2021年第11期455-460,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.11875077,11975037,and 11921006);the National Grand Instrument Project of China(Grant Nos.2019YFF01014400 and 2019YFF01014404).

摘　　要：Laser-accelerated ion beams(LIBs) have been increasingly applied in the field of material irradiation in recent years due to the unique properties of ultra-short beam duration, extremely high beam current, etc. Here we explore an application of using laser-accelerated ion beams to prepare graphene. The pulsed LIBs produced a great instantaneous beam current and thermal effect on the SiC samples with a shooting frequency of 1 Hz. In the experiment, we controlled the deposition dose by adjusting the number of shootings and the irradiating current by adjusting the distance between the sample and the ion source. During annealing at 1100℃, we found that the 190 shots ion beams allowed more carbon atoms to self-assemble into graphene than the 10 shots case. By comparing with the controlled experiment based on ion beams from a traditional ion accelerator, we found that the laser-accelerated ion beams could cause greater damage in a very short time. Significant thermal effect was induced when the irradiation distance was reduced to less than 1 cm, which could make partial SiC self-annealing to prepare graphene dots directly. The special effects of LIBs indicate their vital role to change the structure of the irradiation sample.

关 键 词：laser ion acceleration GRAPHENE SELF-ANNEALING 

分 类 号：TN249[电子电信—物理电子学] TQ127.11[化学工程—无机化工]