高压氢环境专用薄膜应变片的设计制备及性能测试  

Design,Fabrication and Performance Evaluation of Thin Film Strain Gauge for High Pressure Hydrogen Environment

作　　者：张雯丽 张万亮 李雨杭 周成双 张凯宇 郑津洋[2,3] 张林 ZHANG Wenli;ZHANG Wanliang;LI Yuhang;ZHOU Chengshuang;ZHANG Kaiyu;ZHENG Jinyang;ZHANG Lin(College of Materials Science and Engineering,Zhejiang University of Technology,Hangzhou Zhejiang 310000,China;School of Energy Engineering,Zhejiang University,Hangzhou Zhejiang 310000,China;Engineering Research Center for High Pressure Equipment and Safety‘Ministry of Education,Zhejiang University,Hangzhou Zhejiang 310000,China)

机构地区：[1]浙江工业大学材料科学与工程学院,浙江杭州310000 [2]浙江大学能源工程学院,浙江杭州310000 [3]浙江大学高压过程装备与安全教育部工程研究中心,浙江杭州310000

出　　处：《传感技术学报》2021年第10期1285-1290,共6页Chinese Journal of Sensors and Actuators

基　　金：国家重点研发计划项目(2019YFB1505302)。

摘　　要：为解决普通箔式电阻应变片在高压氢环境中存在应变片脱落、零点漂移和蠕变等问题,设计了一种用于高压氢环境中的专用薄膜应变片,具体制备方式为:利用磁控溅射技术,依次在316L不锈钢基底上镀Cr膜(过渡缓冲层)、AlN膜(绝缘部分)、FeCrAl合金膜(功能层,使用掩模板镀膜为栅丝形状)。应变片的测试结果表明:与常规的粘贴型应变片相比,该薄膜应变片消除了在高压氢环境下应变片的零点漂移和蠕变。In order to solve the problems of strain gauge shedding,zero drift and creep in high pressure hydrogen environment,we designed a new type of thin film strain gauge for high-pressure hydrogen environment based on magnetron sputtering technology.The specific preparation method was as follows:the Cr film(transition buffer layer),AlN film(insulation part)and FeCrAl alloy film(functional layer formed by a mask)were successively deposited on 316L stainless steel substrate by using magnetron sputtering technology.The test results indicate that zero drift and creep can be eliminated under high pressure hydrogen gas environment compared with the conventional adhesive strain gauge.

关 键 词：高压氢环境传感 薄膜应变片 磁控溅射 零点漂移 蠕变 

分 类 号：TP393[自动化与计算机技术—计算机应用技术]