一种IDT/(002)ZnO/SiO_(2)/Si多层结构的声表面波器件  

A Surface Acoustic Wave Device with IDT/(002)ZnO/SiO_(2)/Si Multilayer Structure

作　　者：朱敏 刘智荣 包文歧 徐才华 谢立强 ZHU Min;LIU Zhirong;BAO Wenqi;XU Caihua;XIE Liqiang(College of Defense Engineering,Army Engineering University of PLA,Nanjing Jiangsu 210007,China)

机构地区：[1]陆军工程大学国防工程学院,江苏南京210007

出　　处：《传感技术学报》2021年第10期1360-1365,共6页Chinese Journal of Sensors and Actuators

基　　金：国家自然科学基金面上项目(5197052542)。

摘　　要：以IDT/(002)ZnO/SiO_(2)/Si多层结构的声表面波器件为研究对象,通过有限元软件对单对叉指的三维结构进行有限元仿真,得到了不同的ZnO膜厚对SAW器件所激发瑞利波的相速度、机电耦合系数的影响规律,以及SiO_(2)膜厚与SAW器件频率温度系数之间的关系。采用热氧化、射频磁控溅射以及光刻工艺在Si衬底上分别制备SiO_(2)膜、ZnO膜和IDT,制备了三组不同ZnO膜厚的延迟线型SAW器件。通过X射线衍射仪对制备的ZnO薄膜进行检测,结果表明ZnO薄膜具有良好的(002)晶体取向以及良好的结晶质量。采用矢量网络分析仪对所制作SAW器件进行了测试,得到了器件的传输曲线,实验结果与有限元仿真结果具有较好的一致性。A SAW(Surface Acoustic Wave)device with IDT(Interdigital Transducer)/(002)ZnO/SiO_(2)/Si multilayer structure was studied.The three-dimensional structure of the SAW device with single pair of IDT was analyzed by the finite element simulation software.The effects of different ZnO film thickness on the phase velocity and electromechanical coupling coefficient of Rayleigh wave excited by SAW devices,and the relationship between the SiO_(2)film thickness and the frequency temperature coefficient of the SAW device were obtained.The SiO_(2)film,the ZnO film and the IDT were prepared on Si substrate by thermal oxidation,RF magnetron sputtering and photolithography method individually.Then,three groups of delay line SAW devices with different ZnO film thickness were fabricated.The prepared ZnO films was tested by X-ray diffractometer,and the results showed that the ZnO films had good crystallization orientation and good crystallization quality.A vector network analyzer was used to test the fabricated SAW device,and the transmission curve of the device was characterized.The experimental results are in good agreement with the finite element simulation results.

关 键 词：声表面波 有限元仿真 多层结构 ZNO薄膜 SiO_(2)薄膜 

分 类 号：TN65[电子电信—电路与系统] TN384