宽禁带碳化硅半导体和电动汽车城市行驶电耗影响分析  

Study of Wide Bandgap SiC Technology For City Driving Energy Consumption in Electric vehicle

作　　者：伍魏明 窦炜 邢志乐 黄刚 葛昭 Wu Weiming;Dou Wei;Xing Zhile;Huang Gang;Ge Zhao

机构地区：[1]蔚来汽车科技(安徽)有限公司,安徽省合肥市230000 [2]上海蔚来汽车有限公司,上海市201805

出　　处：《时代汽车》2021年第24期106-108,共3页Auto Time

摘　　要：本文研究了碳化硅宽禁带半导体对电动汽车行驶能耗的影响,对比分析碳化硅和硅基驱动系统的整车城市行驶电耗差异。基于纯电四驱车型,开展了电动汽车CLTC-P仿真电耗和台架试验验证。分析碳化硅对典型城市工况以及高速80到120kph的电耗节能影响。分析表明,碳化硅电驱动系统可以降低4.43%的典型城市工况电耗;城市80kph到120kph等速行驶工况下,平均电耗可降低2.39%。This article studies the impact of silicon carbide wide bandgap semiconductors in electric vehicle drive energy consumption,and compares and analyzes the power consumption of the entire vehicle with silicon carbide and silicon-based drive systems.Based on the four-wheel drive EV vehicle,the CLTC-P simulation power consumption and bench test verification of electric vehicles are carried out.The article analyzes the impact of silicon carbide on typical urban working conditions and high-speed 80~120kph power consumption and energy saving,and the simulation shows that the silicon carbide electric drive system can reduce the power consumption of typical urban conditions by 4.43%.Average power consumption can be reduced by 2.39%when driving at constant speed during 80kph to 120kph.

关 键 词：碳化硅 宽禁带半导体 功率器件 电动汽车 城市驾驶电耗 

分 类 号：U46[机械工程—车辆工程]