基于物理的体硅CMOS存储器多位翻转特性电路级仿真分析  

Physics-based Circuit-level Analysis of MCU Characteristics in Bulk CMOS SRAM

作　　者：王坦 丁李利[1] 罗尹虹[1] 赵雯[1] 张凤祁[1] WANG Tan;DING Lili;LUO Yinhong;ZHAO Wen;ZHANG Fengqi(State Key Laboratory of Intense Pulsed Radiation Simulation and Effect,Northwest Institute of Nuclear Technology,Xi’an 710024,China)

机构地区：[1]强脉冲辐射环境模拟与效应国家重点实验室,西北核技术研究所,陕西西安710024

出　　处：《原子能科学技术》2021年第12期2121-2127,共7页Atomic Energy Science and Technology

基　　金：Supported by National Natural Science Foundation of China(11690043)。

摘　　要：本文提出了一种电路级仿真方法,对体硅CMOS存储器中由单粒子效应引发的多位翻转特性进行了建模分析。该方法综合考虑了扩散效应及寄生双极放大效应引发的电荷共享收集机制,能基于版图特征重构多节点电荷收集的电流源,实现对单粒子效应位翻转截面的预估计算。针对一款65 nm工艺体硅CMOS存储器,对不同能量及角度入射的重离子引发的多位翻转效应(MCU)进行了仿真计算,并与试验结果进行了对比。A circuit-level engineering approach to estimate single-event induced multiplecell upset(MCU)characteristics in bulk CMOS SRAM was mainly presented in this paper.The proposed multi-nodes charge collection model could evaluate the bit-upset cross sections in the layout-design process considering parasitic-bipolar effects.The impact of different LETs and tilting angles of ion incidence on MCUs were studied and compared to experimental data for the devices manufactured by 65 nm technology.

关 键 词：单粒子效应 多位翻转 电路级仿真 位翻转截面 倾角入射 

分 类 号：O571.5[理学—粒子物理与原子核物理]