柔性倒置赝型三结太阳电池高能质子辐射效应研究  

High Energy Proton Radiation Effect on Flexible Thin-film Inverted Metamorphic Triple-junction Solar Cell

作　　者：张延清[1] 周佳明 刘超铭[1] 施祥蕾 杨洋[2] 焦小雨 孙利杰[2] 王训春[2] 肖立伊[3] 王天琦[1] 霍明学[1] ZHANG Yanqing;ZHOU Jiaming;LIU Chaoming;SHI Xianglei;YANG Yang;JIAO Xiaoyu;SUN Lijie;WANG Xunchun;XIAO Liyi;WANG Tianqi;HUO Mingxue(Space Environment Simulation Research Infrastructure,Harbin Institute of Technology,Harbin 150001,China;State Key Laboratory of Space Power Technology,Shanghai Institute of Space Power Sources,Shanghai 200245,China;Microelectronics Center,Harbin Institute of Technology,Harbin 150001,China)

机构地区：[1]哈尔滨工业大学空间环境与物质科学研究院,黑龙江哈尔滨150001 [2]上海空间电源研究所空间电源技术重点实验室,上海200245 [3]哈尔滨工业大学微电子中心,黑龙江哈尔滨150001

出　　处：《原子能科学技术》2021年第12期2216-2223,共8页Atomic Energy Science and Technology

基　　金：Supported by National Natural Science Foundation of China(11805045,11775061,12075069,61771167);Project of State Key Laboratory of Intense Pulsed Radiation Simulation and Effect(SKLIPR2015);Shanghai Institute of Space Power-sources/State Key Laboratory of Space Power-sources Technology(SAST2020-099);China Postdoctoral Science Foundation(2021T140156)。

摘　　要：为考察柔性薄膜GaInP/GaAs/InGaAs倒赝型三结(IMM3J)太阳电池的抗辐照性能,本文对其进行了1、3、5 MeV高能质子辐照。SRIM模拟结果表明,1、3、5 MeV质子辐照在IMM3J电池中造成均匀的位移损伤。光特性(LIV)结果表明,开路电压(V_(oc))、短路电流(I_(sc))和最大输出功率(P_(max))与质子注量呈对数退化规律。通过非电离能量损失(NIEL)将不同能量质子的注量转化为位移损伤剂量(DDD),结果显示,V_(oc)和P_(max)与DDD呈对数退化规律,而I_(sc)遵循两种不同的退化规律。光谱响应测试证明,GaInP子电池具有优异的抗辐照性能,3个子电池中InGaAs(1.0 eV)子电池的抗辐照性能最差。A flexible thin-film GaInP/GaAs/InGaAs inverted metamorphic triple-junction(IMM3J)solar cell with conversion efficiency up to 32.47%(air mass(AM)0,1367 W/cm^(2))was prepared to meet the requirements of space solar cells for lightweight and high efficiency.High-energy proton radiation(1,3 and 5 MeV)was carried out to study its anti-irradiation performance.The SRIM simulation models indicate that 1,3 and 5 MeV proton irradiation will cause approximately uniform damage in IMM3J cells.The light IV(LIV)results show that the degradation of the open-circuit voltage(V_(oc)),short-circuit current(I_(sc))and_(max)imum output power(P_(max))follows the logarithm change of the proton fluence.The fluences of different energy protons were converted into the displacement damage dose(DDD)through non-ionizing energy loss(NIEL).The V_(oc) and P_(max) decrease with an approximative logarithmic change of DDD,while the I_(sc) follows two different degradation behaviors.The spectral response tests prove that GaInP sub-cell has excellent anti-irradiation performance,but InGaAs(1.0 eV)sub-cell has the worst anti-irradiation resistance and is the current-limiting sub-cell during the 1,3 and 5 MeV protons irradiation continuously.

关 键 词：IMM3J太阳电池 辐射效应 位移损伤剂量 

分 类 号：TL814[核科学技术—核技术及应用]