硅/氧浓度初始分布对硅晶圆内V-O_(2)对演变影响的仿真  

Simulation of Effect of the Initial Distributions of Silicon and Oxygen Concentrations on the V-O_(2) Pair's Evolution in Silicon Monocrystalline Wafer

作　　者：关小军[1] 关宇昕 王善文 GUAN Xiaojun;GUAN Yuxin;WANG Shanwen(School of Material Science and Engineering,Shandong University,Jinan 250061,China;Outpie Partners B V,High Tech Campus,Eindhoven 5656AE,Netherlands)

机构地区：[1]山东大学材料科学与工程学院,山东济南250061 [2]Outpie Partners B.V.,荷兰埃因霍温高科技园区5656AE

出　　处：《徐州工程学院学报（自然科学版）》2021年第4期35-42,共8页Journal of Xuzhou Institute of Technology(Natural Sciences Edition)

基　　金：国家自然科学基金项目(51375269);山东大学晶体材料国家重点实验室开放课题(KF1303)。

摘　　要：为了揭示自间隙硅原子相对浓度和间隙氧原子相对浓度的初始分布状态对低温退火期间硅晶圆内V-O_(2)对介观演变的影响,应用原有相场仿真模型及其改进模型,仿真了两个不同的点缺陷相对浓度初始分布状态下退火的硅晶圆内V-O_(2)对演变过程.结果表明:在文章的仿真条件下,均匀分布的硅原子相对浓度未影响V-O_(2)对演变,这与不考虑硅原子存在的情况相同;与均匀分布状态相比,初始的氧原子相对浓度随机均匀分布状态使得V-O_(2)对生成速度减慢.In order to discover the effect of the initial distributions of the relative concentrations of self-interstitial silicon atom and interstitial oxygen atom on the evolution of V-O_(2) pair in the silicon monocrystalline wafer during low-temperature annealing,the evolution processes of V-O_(2) pair in the silicon wafers annealed at two initial distributions of point defect's relative concentrations were simulated by applying the existing phase-field simulation model and its improved one.The result showed that,in the simulation conditions proposed in this article,the relative concentration of uniformly distributed silicon atoms does not affect the evolution of V-O_(2) pair,which is the same as the case where the existence of silicon atoms is not considered.Compared with the distribution state,the initial random and uniform distribution of the relative concentration of oxygen atoms slows down the generation speed of V-O_(2) pairs.

关 键 词：仿真 硅晶圆 V-O_(2)对 自间隙硅原子 间隙氧原子 初始的浓度分布 

分 类 号：TG111[金属学及工艺—物理冶金]